RU40190R

RU40190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested TO-220 • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC-DC Converters and Off-line UPS • Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① V TC=25°C 190 A TC=25°C 760 TC=25°C 190 TC=100°C TC=25°C 146 300 W TC=100°C 150 W 0.5 °C/W 812 mJ Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ② A ① ① A Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 www.ruichips.com RU40190R Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ Test Condition VGS=0V, IDS=250µA RU40190R Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=75A 30 2 Unit V 40 VDS= 40V, VGS=0V Gate Threshold Voltage Max. 3 2.5 µA 4 V ±100 nA 3.5 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=75A, VGS=0V ISD=75A, dlSD/dt=100A/µs 40 ns 52 nC 1.2 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=20V, Frequency=1.0MHz 4800 950 pF 480 19 VDD=20V, RL=0.3Ω, IDS=75A, VGEN=10V, RG=2.5Ω Turn-off Fall Time 96 70 ns 50 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 120 VDS=32V, VGS=10V, IDS=75A 34 nC 46 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Pulse width limited by safe operating area. Limited by TJmax, IAS =57A, VDD = 32V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 2 www.ruichips.com RU40190R Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU40190R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU40190R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU40190R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 6 www.ruichips.com RU40190R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU40190R RU40190R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 7 www.ruichips.com RU40190R Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 C 0.48 0.50 0.52 0.019 0.020 0.021 L1 - - 3.95 - - 0.156 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 0.063 0.1BSC 0.2BSC 2.50REF. 0.098REF. D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° E1 - 8.70 - - 0.343 - E2 9.80 10.00 10.20 0.386 0.394 0.401 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 8 www.ruichips.com RU40190R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 9 www.ruichips.com