RU40191S

RU40191S N-Channel Advanced Power MOSFET Features Pin Description • 40V/190A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V D • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested G S • Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications • DC-DC Converters and Off-line UPS • Switching Applications G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 190 A TC=25°C 760 A TC=25°C 190 TC=100°C 146 TC=25°C 300 TC=100°C 150 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation IDP A W RqJC Thermal Resistance-Junction to Case 0.5 °C/W RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W 812 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 1 www.ruichips.com RU40191S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40191S Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) VGS=0V, IDS=250µA 40 V VDS=40V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=75A 30 1 1.8 µA 3 V ±100 nA 3 mΩ 1.3 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=75A, VGS=0V ISD=75A, dlSD/dt=100A/µs 40 ns 52 nC Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.2 Ciss Input Capacitance VGS=0V, 4800 Coss Output Capacitance 950 Crss Reverse Transfer Capacitance VDS=20V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=20V,IDS=75A, 96 td(OFF) Turn-off Delay Time VGEN=10V,RG=2.5Ω 70 tf ns 50 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 480 19 Turn-off Fall Time Gate Charge Characteristics pF VDS=32V, VGS=10V, IDS=75A 120 34 nC 46 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =57A, VDD = 32V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 2 www.ruichips.com RU40191S Ordering and Marking Information Device Marking Package RU40191S RU40191S TO263 Tube 50 - - RU40191S-R RU40191S TO263 Reel 800 13" 24mm Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 Packaging Quantity Reel Size Tape width 3 www.ruichips.com RU40191S Typical Characteristics VGS=10V RDS(ON) limited Ids=75A 10µs 100µs 1ms 10ms DC TC=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJC=0.5°C/W Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 4 www.ruichips.com RU40191S Typical Characteristics VGS=8,9,10V 5V 10V 3V VGS=10V IDS=75A TJ=150°C TJ=25°C TJ=25°C Rds(on)=1.8mΩ Frequency=1.0MHz VDS=32V IDS=75A Ciss Coss Crss Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 5 www.ruichips.com RU40191S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 6 www.ruichips.com RU40191S Package Information TO263 θ1 θ1 θ2 θ θ2 Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2019 7 www.ruichips.com