RU40220R

RU40220R N-Channel Advanced Power MOSFET Features Pin Description · 40V/220A RDS (ON)=2.3 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 TO-220F TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 40 ±20 175 -55 to 175 220 ② V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 800 ① 220 170 ② A 400 230 0.45 62.5 W °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 1400 mJ -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev. A –APR., 2011 www.ruichips.com RU40220R Electrical Characteristics Parameter Static Characteristics BVDSS (TA=25°C Unless Otherwise Noted) RU40220R Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS= 40V, VGS=0V TJ=85°C 40 1 30 2 3 4 ±100 2.3 3 V µA V nA mΩ Symbol Zero Gate Voltage Drain Current IDSS VGS(th) IGSS RDS(ON) ③ Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=10V, IDS=75A Diode Characteristics VSD trr qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=75A, VGS=0V ISD=40A, dlSD/dt=100A/µs 74 148 1.2 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz 1.4 5750 1400 480 21 Ω pF VDD=35V, RL=35Ω, IDS=1A, VGEN= 10V, RG=6Ω 37 ns 75 115 Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Pulse width limited by safe operating area. ②Current limited by package( Limitation Current is 75A ) ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . 154 VDS=30V, VGS= 10V, IDS=40A 44 47 218 nC Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 2 www.ruichips.com RU40220R Typical Characteristics Power Dissipation Drain Current ID - Drain Current (A) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Ptot - Power (W) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 ID - Drain Current (A) www.ruichips.com RU40220R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (MR) VGS - Gate - Source Voltage (V) Normalized Threshold Vlotage Tj - Junction Temperature (°C) Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 4 www.ruichips.com RU40220R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 5 www.ruichips.com RU40220R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 6 www.ruichips.com RU40220R Ordering and Marking Information RU40220 Package (Available) R: TO-220 ; Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Device Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 7 www.ruichips.com RU40220R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 8 www.ruichips.com RU40220R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev.A –APR., 2011 9 www.ruichips.com