RU40L10L

RU40L10L P-Channel Advanced Power MOSFET MOSFET Features • -40V/-32A, RDS (ON) =20mΩ(tpy.)@VGS=-10V RDS (ON) =30mΩ(tpy.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications • Power Supplies • Inverter P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating -40 ±20 175 -55 to 175 TC=25°C -32 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ② -120 A A -32 -23 52 26 2.9 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C W °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 144 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 www.ruichips.com RU40L10L Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TC=25°C Unless Otherwise Noted) RU40L10L Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=-250µA VDS= -40V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS= -10V, IDS=-10A VGS= -4.5V, IDS=-8A -40 -1 -30 -1.0 -1.8 -2.5 ±10 20 30 25 35 V µA V µA mΩ mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=-1A, VGS=0V ISD=-1A, dlSD/dt=100A/µs -0.75 36 28 -1 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= -20V, Frequency=1.0MHz VDD=-20V, RL=0.66Ω, IDS=-30A, VGEN=-10V, RG=6Ω 1.5 2310 250 165 15 23 43 17 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulse width limited by safe operating area. Limited by TJmax, IAS =24A, VDD =-24V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. 45 VDS=-32V, VGS= -10V, IDS=-30A 8 15 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 2 www.ruichips.com RU40L10L Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) -ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com -ID - Drain Current (A) RU40L10L Typical Characteristics Output Characteristics Drain-Source On Resistance -VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage -VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU40L10L Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) -IS - Source Current (A) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -VDS - Drain-Source Voltage (V) -VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 5 www.ruichips.com RU40L10L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 6 www.ruichips.com RU40L10L Ordering and Marking Information Device RU40L10L Marking RU40L10L Package TO-252 Packaging Tape&Reel Quantity 2500 Reel Size 13’’ Tape width 16mm Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 7 www.ruichips.com RU40L10L Package Information TO252-2L SYMBOL A A1 b C D D1 D2 E e MM MIN 2.200 0.000 0.660 0.460 6.500 5.100 6.000 2.186 MAX 2.400 0.127 0.860 0.580 6.700 5.460 6.200 2.386 MIN INCH MAX 0.094 0.005 0.034 0.023 0.264 0.215 0.244 0.094 SYMBOL L L1 L2 L3 L4 Φ θ h V MIN 9.800 1.400 0.600 1.100 0° 0.000 0.087 0.000 0.026 0.018 0.256 0.201 0.236 0.086 MM MAX 10.400 1.700 1.000 1.300 8° 0.300 INCH MIN 0.386 0.055 0.024 0.043 0° 0.000 MAX 0.409 0.067 0.039 0.051 8° 0.012 2.900 REF. 1.600 REF. 0.114 REF. 0.063REF. 4.830 REF. 0.190 REF. 5.350 REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 8 www.ruichips.com RU40L10L Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 9 www.ruichips.com