RU4H10P

RU4H10P N-Channel Advanced Power MOSFET MOSFET Features • 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 18pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available Pin Description TO-220F Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 400 ±30 150 -55 to 150 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 10 ① ① ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested ID Continuous Drain Current 40 10 PD RθJC ② 6.4 27 11 Maximum Power Dissipation Thermal Resistance-Junction to Case W °C/W 4.6 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 100 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 www.ruichips.com RU4H10P Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TC=25°C Unless Otherwise Noted) RU4H10P Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 400V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V VGS=10V, IDS=5A 400 1 30 2 3 4 ±100 0.45 0.55 V µA V nA Ω Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=10A, VGS=0V ISD=10A, dlSD/dt=100A/µs 250 2.3 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 200V, Frequency=1.0MHz VDD=200V, RL=20Ω, IDS=10A, VGEN= 10V, RG=25Ω 10 1060 175 23 15 22 55 22 1.2 V ns µC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Current limited by maximum junction temperature. ②Limited by TJmax, IAS =14A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. 23 VDS=320V, VGS= 10V, IDS=10A 3.5 9 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 2 www.ruichips.com RU4H10P Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU4H10P Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (Ω) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 4 Normalized Threshold Voltage Tj - Junction Temperature (°C) www.ruichips.com RDS(ON) - On - Resistance () RU4H10P Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU4H10P Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 6 www.ruichips.com RU4H10P Ordering and Marking Information Device RU4H10P Marking RU4H10P Package TO-220F Packaging Tube Quantity 50 Reel Size Tape width - Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 7 www.ruichips.com RU4H10P Package Information TO-220F-3L SYMBOL E A A1 A2 A3 A4 c D Q H1 e Øp L D1 Øp1 Øp2 MM MIN 9.96 4.50 2.34 0.95 0.42 2.65 15.67 8.80 6.48 12.78 8.99 1.40 1.15 NOM 10.16 4.70 2.54 1.05 0.52 2.75 0.50 15.87 9.00 6.68 2.54BSC 3.183 12.98 9.19 1.50 1.20 13.18 9.39 1.60 1.25 0.503 0.354 0.055 0.045 MAX 10.36 4.90 2.74 1.15 0.62 2.85 16.07 9.20 6.88 MIN 0.392 0.177 0.092 0.037 0.017 0.104 0.617 0.346 0.255 INCH NOM 0.400 0.185 0.100 0.041 0.020 0.108 0.020 0.625 0.354 0.263 0.1BSC 0.125 0.511 0.362 0.059 0.047 0.519 0.370 0.063 0.049 MAX 0.408 0.193 0.108 0.045 0.024 0.112 0.633 0.362 0.271 SYMBOL Øp3 MIN 5° 0.05 1.90 13.61 3.20 3.25 5.90 6.90 1.17 0.77 1.10 9.8 0.75 MM NOM 3.450 7° 45° 0.10 2.00 13.81 3.30 3.45 6.00 7.00 1.20 0.8 1.30 10.00 0.8 MAX 9° 0.15 2.10 14.01 3.40 3.65 6.10 7.10 1.24 0.85 1.50 10.20 0.85 MIN 5° 0.002 0.075 0.536 0.126 0.128 0.232 0.272 0.046 0.030 0.043 0.386 0.030 INCH NOM 0.136 7° 45° 0.004 0.079 0.544 0.130 0.136 0.236 0.276 0.047 0.031 0.051 0.394 0.031 MAX 9° 0.006 0.083 0.552 0.134 0.144 0.240 0.280 0.048 0.033 0.059 0.412 0.033 θ1 θ2 DEP F1 F2 F3 G G1 G2 b1 b2 b3 E1 K1 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 8 www.ruichips.com RU4H10P Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 9 www.ruichips.com