RU602B

RU602B P-Channel Advanced Power MOSFET MOSFET Features • 60V/1.5A, RDS (ON) =220mΩ (Typ.) @ VGS=10V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description SOT-23 Applications • DC/DC Converter • Battery Switch Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current N-Channel MOSFET Rating 60 ±25 150 -55 to 150 TA=25°C 1.1 ① Unit V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TA=25°C TA=25°C TA=70°C PD RθJA ② 6 A A 1.5 1.2 1 0.64 125 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 www.ruichips.com RU602B Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU602B Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS=10V, IDS=1A 60 1 30 2 3 4 ±100 220 250 V µA V nA mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs 23 17 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=1Ω 1.5 195 26 14 8 11 18 7 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=48V, VGS=10V, IDS=1A 6.5 1.3 2.3 nC Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 2 www.ruichips.com RU602B Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU602B Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 4 Normalized Threshold Voltage Tj - Junction Temperature (°C) www.ruichips.com RDS(ON) - On - Resistance (m) RU602B Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU602B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 6 www.ruichips.com RU602B Ordering and Marking Information Device RU602B Marking ① Package SOT-23 Packaging Tape&Reel Quantity 3000 Reel Size 7’’ Tape width 8mm 3XYWW ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 7 www.ruichips.com RU602B Package Information SOT-23 SYMBOL A A1 A2 b c D E MM MIN 0.900 0.000 0.900 0.300 0.080 2.800 1.200 MAX 1.150 0.100 1.050 0.500 0.150 3.000 1.400 MIN INCH MAX 0.045 0.004 0.041 0.020 0.006 0.118 0.055 SYMBOL E1 e e1 L L1 θ MIN 2.250 1.800 0.300 0° 0.035 0.000 0.035 0.012 0.003 0.110 0.047 MM MAX 2.550 2.000 0.500 8° INCH MIN 0.089 0.071 0.012 0° MAX 0.100 0.079 0.020 8° 0.950 TYP. 0.550 REF. 0.037 TYP. 0.022 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 8 www.ruichips.com RU602B Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 9 www.ruichips.com