RU6080L

RU6080L N-Channel Advanced Power MOSFET MOSFET Features • 60V/80A, RDS (ON) =7mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications • SMPS • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 80 ② Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 310 ① A A W W °C/W 80 65 ② Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 125 63 1.2 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 225 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 www.ruichips.com RU6080L Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU6080L Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=30A 60 1 10 2 3 4 ±100 7 8.5 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs 0.8 38 45 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=30V, RL=30Ω, IDS=30A, VGEN= 10V, RG=4.7Ω 2.0 2840 300 140 14 45 54 32 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=48V, VGS= 10V, IDS=30A 55 11 13 72 nC Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 60A. Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 2 www.ruichips.com RU6080L Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 ID - Drain Current (A) www.ruichips.com RU6080L Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU6080L Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) 5 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 www.ruichips.com RU6080L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 6 www.ruichips.com RU6080L Ordering and Marking Information RU6080 Package (Available) L : TO252 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR: Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 7 www.ruichips.com RU6080L Package Information TO252-2L SYMBOL A A1 b C D D1 D2 E e MM MIN 2.200 0.000 0.660 0.460 6.500 5.100 6.000 2.186 MAX 2.400 0.127 0.860 0.580 6.700 5.460 6.200 2.386 MIN INCH MAX 0.094 0.005 0.034 0.023 0.264 0.215 0.244 0.094 SYMBOL L L1 L2 L3 L4 Φ θ h V MIN 9.800 1.400 0.600 1.100 0° 0.000 0.087 0.000 0.026 0.018 0.256 0.201 0.236 0.086 MM MAX 10.400 1.700 1.000 1.300 8° 0.300 INCH MIN 0.386 0.055 0.024 0.043 0° 0.000 MAX 0.409 0.067 0.039 0.051 8° 0.012 2.900 REF. 1.600 REF. 0.114 REF. 0.063REF. 4.830 REF. 0.190 REF. 5.350 REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 8 www.ruichips.com RU6080L Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– APR., 2011 9 www.ruichips.com