RU60E16L

RU60E16L N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C 16 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① TC=25°C 64 TC=25°C TC=100°C 16 11.5 TC=25°C 40 TC=100°C 20 A ② A W 3.75 °C/W 25 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 www.ruichips.com RU60E16L Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ Test Condition VGS=0V, IDS=250µA RU60E16L Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±16V, VDS=0V Unit V 60 VDS= 60V, VGS=0V Gate Threshold Voltage Max. 30 1.5 2 µA 2.7 V ±10 µA VGS= 10V, IDS=8A 60 75 mΩ VGS= 4.5V, IDS=5.5A 75 90 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=8A, VGS=0V 38 ns 67 nC VGS=0V,VDS=0V,F=1MHz 1.3 Ω VGS=0V, VDS= 30V, Frequency=1.0MHz 480 ISD=8A, dlSD/dt=100A/µs ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 75 48 15 VDD=30V, RL=3.8Ω, IDS=8A, VGEN= 10V, RG=4.7Ω Turn-off Fall Time 18 ns 33 16 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 14 VDS=48V, VGS= 10V, IDS=8A 2.9 18 nC 5.2 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Limited by TJmax, IAS =10A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 2 www.ruichips.com RU60E16L Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU60E16L Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU60E16L Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU60E16L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 6 www.ruichips.com RU60E16L Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU60E16L RU60E16L TO-252 Tape&Reel 2500 13’’ 16mm Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 7 www.ruichips.com RU60E16L Package Information TO252-2L SYMBOL MM INCH MM SYMBOL MIN MAX MIN MAX A 2.200 2.400 0.087 0.094 L A1 0.000 0.127 0.000 0.005 L1 INCH MIN MAX MIN MAX 9.800 10.400 0.386 0.409 2.900 REF. b 0.660 0.860 0.026 0.034 L2 C 0.460 0.580 0.018 0.023 L3 D 6.500 6.700 0.256 0.264 L4 0.600 1.000 0.024 0.039 D1 5.100 5.460 0.201 0.215 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° 0.000 0.300 0.000 0.012 D2 4.830 REF. 0.190 REF. E 6.000 6.200 0.236 0.244 h e 2.186 2.386 0.086 0.094 V 1.400 1.700 0.114 REF. 1.600 REF. 5.350 REF. 0.055 0.067 0.063REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 8 www.ruichips.com RU60E16L Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. C– JUN., 2011 9 www.ruichips.com