RU60E16R

RU60E16R N-Channel Advanced Power MOSFET MOSFET Features • 60V/16A, RDS (ON) =60mΩ(tpy.)@VGS=10V RDS (ON) =75mΩ(tpy.)@VGS=4.5V • Super High Dense Cell Design • ESD protected • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications • Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±20 175 -55 to 175 TC=25°C 16 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 64 ② ① A A W W °C/W 16 13 42 21 PD RθJC ③ Maximum Power Dissipation Thermal Resistance-Junction to Case 3.5 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 30 mJ www.ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 RU60E16R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TC=25°C Unless Otherwise Noted) RU60E16R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS= 10V, IDS=8A VGS= 4.5V, IDS=5.5A 60 1 30 1.5 2 2.7 ±100 60 75 80 100 V µA V nA mΩ mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=8A, VGS=0V ISD=8A, dlSD/dt=100A/µs 38 67 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=30V, RL=3.8Ω, IDS=8A, VGEN= 10V, RG=4.7Ω 1.3 480 75 48 15 18 33 16 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=48V, VGS= 10V, IDS=8A 14 2.9 5.2 nC Calculated continuous current based on maximum allowable junction temperature. Limited by bonding wire. Pulse width limited by safe operating area. Limited by TJmax, IAS =8.5A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 2 www.ruichips.com RU60E16R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 ID - Drain Current (A) www.ruichips.com RU60E16R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) Drain-Source On Resistance RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU60E16R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 5 www.ruichips.com RU60E16R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 6 www.ruichips.com RU60E16R Ordering and Marking Information Device RU60E16R Marking RU60E16R Package TO-220 Packaging Tube Quantity 50 Reel Size Tape width - Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 7 www.ruichips.com RU60E16R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 8 www.ruichips.com RU60E16R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2011 9 www.ruichips.com