RU70E4D

RU70E4D N-Channel Advanced Power MOSFET MOSFET Features • 70V/4A, RDS (ON) =80mΩ (Type) @ VGS=10V RDS (ON) =90mΩ (Type) @ VGS=4.5V • ESD Protected • Reliable and Rugged • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Available Pin Description SOT-223 Applications • Power Management • DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 70 ±20 150 -55 to 150 TC=25°C TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C 4 16 4 3.4 2.5 1.6 50 W °C/W ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested ID PD RθJA ② Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 www.ruichips.com RU70E4D Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU70E4D Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 70V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS= 10V, IDS=4A VGS= 4.5V, IDS=3A 70 1 30 1 1.8 2.5 ±10 80 90 100 105 V µA V uA mΩ mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=2.5A, VGS=0V ISD=2.5A, dlSD/dt=100A/µs 40 75 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 35V, Frequency=1.0MHz VDD=35V, RL=30Ω, IDS=2.5A, VGEN= 10V, RG=25Ω 0.7 460 44 24 3 4 12 5 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Current limited by maximum junction temperature. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. 16 VDS=56V, VGS= 10V, IDS=2.5A 3 5 20 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 2 www.ruichips.com RU70E4D Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU70E4D Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 4 Normalized Threshold Voltage Tj - Junction Temperature (°C) www.ruichips.com RDS(ON) - On - Resistance (m) RU70E4D Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU70E4D Ordering and Marking Information RU70E4 Package (Available) D : SOT-223; C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel H: SOP-8 ; Operating Temperature Range Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 6 www.ruichips.com RU70E4D Package Information SOT-223 SYMBOL A A1 A2 b c D D1 MM MIN 1.520 0.000 1.500 0.660 0.250 6.200 2.900 MAX 1.800 0.100 1.700 0.820 0.350 6.400 3.100 MIN INCH MAX 0.071 0.004 0.067 0.032 0.014 0.252 0.122 SYMBOL E E1 e e1 L θ MIN 3.300 6.830 4.500 0.900 0° 0.060 0.000 0.059 0.026 0.010 0.244 0.114 MM MAX 3.700 7.070 4.700 1.150 10° INCH MIN 0.130 0.269 0.177 0.035 0° MAX 0.146 0.278 0.185 0.045 10° 2.300(BSC) 0.091(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 7 www.ruichips.com RU70E4D Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A – APR., 2011 8 www.ruichips.com