RU8205C6

RU8205C6 N-Channel Advanced Power MOSFET MOSFET Features • 20V/6A, RDS (ON) =22mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description SOT-23-6 Applications • Power Management Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Dual N-Channel MOSFET Rating 20 ±12 150 -55 to 150 TA=25°C 1.7 ① Unit V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=4.5V) TA=25°C TA=25°C TA=70°C PD RθJA ② 24 A A 6 4.5 1.25 0.8 100 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 www.ruichips.com RU8205C6 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU8205C6 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±10V, VDS=0V VGS=4.5V, IDS=6A VGS=2.5V, IDS=5A 20 1 30 0.5 0.7 1.5 ±100 22 30 30 40 V µA V nA mΩ mΩ Diode Characteristics VSD ③ Diode Forward Voltage ④ ISD=1A, VGS=0V 1 V Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=1.7Ω, IDS=6A, VGEN=4.5V, RG=6Ω 1.8 580 120 95 5 11 38 13 Ω pF ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . 10 VDS=16V, VGS=4.5V, IDS=6A 1.5 3.4 14 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 2 www.ruichips.com RU8205C6 Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU8205C6 Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU8205C6 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU8205C6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 6 www.ruichips.com RU8205C6 Ordering and Marking Information Device RU8205C6 Marking ① Package SOT-23-6 Packaging Tape&Reel Quantity 3000 Reel Size 7’’ Tape width 8mm 4XYWW ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 7 www.ruichips.com RU8205C6 Package Information SOT-23-6 SYMBOL A A1 A2 b c D MM MIN 1.050 0.000 1.050 0.300 0.100 2.820 MAX 1.250 0.100 1.150 0.500 0.200 3.020 MIN INCH MAX 0.049 0.004 0.045 0.020 0.008 0.119 SYMBOL E E1 e e1 L θ MIN 1.500 2.650 1.800 0.300 0° 0.041 0.000 0.041 0.012 0.004 0.111 MM MAX 1.700 2.950 2.000 0.600 8° INCH MIN 0.059 0.104 0.071 0.012 0° MAX 0.067 0.116 0.079 0.024 8° 0.950(BSC) 0.037(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 8 www.ruichips.com RU8205C6 Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 9 www.ruichips.com