RU8205G

RU8205G N-Channel Advanced Power MOSFET MOSFET Features • 20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged Pin Description TSSOP-8 • Lead Free and Green Available Applications • Power Management Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Dual N-Channel MOSFET Rating 20 ±12 150 -55 to 150 TA=25°C 1.7 ① Unit V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=4.5V) TA=25°C TA=25°C TA=70°C PD RθJA ② 24 A A 6 4.5 1.5 0.96 83.5 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 www.ruichips.com RU8205G Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU8205G Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±10V, VDS=0V VGS=4.5V, IDS=6A VGS=2.5V, IDS=5A 20 1 30 0.5 0.7 1.5 ±100 21 30 24 40 V µA V nA mΩ mΩ Diode Characteristics VSD ③ Diode Forward Voltage ④ ISD=1A, VGS=0V 1 V Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=1.7Ω, IDS=6A, VGEN=4.5V, RG=6Ω 1.8 580 120 95 5 11 38 13 Ω pF ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . 10 VDS=16V, VGS=4.5V, IDS=6A 1.5 3.4 14 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 2 www.ruichips.com RU8205G Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU8205G Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU8205G Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU8205G Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 6 www.ruichips.com RU8205G Ordering and Marking Information RU8205 Package (Available) G : TSSOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 7 www.ruichips.com RU8205G Package Information TSSOP-8 SYMBOL D E b c E1 A MM MIN 2.900 4.300 0.190 0.090 6.250 MAX 3.100 4.500 0.300 0.200 6.550 1.200 MIN INCH MAX 0.122 0.177 0.012 0.008 0.258 0.047 SYMBOL A2 A1 e L H θ MIN 0.800 0.050 0.500 0° 0.114 0.169 0.007 0.004 0.246 MM MAX 1.050 0.150 0.700 8° INCH MIN 0.031 0.002 0.020 0° MAX 0.041 0.006 0.028 8° 0.65 (BSC) 0.25(TYP) 0.026 (BSC( 0.01(TYP) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 8 www.ruichips.com RU8205G Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2011 9 www.ruichips.com