RU8590R

RU8590R N-Channel Advanced Power MOSFET Features Pin Description • 85V/90A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V • Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications • High Speed Power Switching • UPS G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 85 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 90 A TC=25°C 360 A TC=25°C 90 TC=100°C 64 TC=25°C 188 TC=100°C 94 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 0.8 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W 306 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU8590R Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU8590R Symbol Parameter Test Condition Unit Min. Typ. 85 90 Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current V VDS=85V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=45A µA 30 2 3 5.8 4 V ±100 nA 8 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=45A, VGS=0V ISD=45A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 29 ns 45 nC 1.3 Ω ⑤ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=40V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 275 td(ON) Turn-on Delay Time 25 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 480 49 pF ns 121 17 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=40V,IDS=45A, VGEN=10V,RG=0.8Ω 4350 48 VDS=68V, VGS=10V, IDS=45A 13 nC 16 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =35A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 2 www.ruichips.com RU8590R Ordering and Marking Information Device Marking Package RU8590R RU8590R TO220 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com RU8590R Typical Characteristics Drain Current Power Dissipation 200 100 180 90 ID - Drain Current (A) PD - Power (W) 160 140 120 100 80 60 40 20 80 70 60 50 Limited By Package 40 30 20 10 0 VGS=10V 0 0 25 50 75 100 125 150 175 25 50 100 10µs 100µs 1ms 10ms 10 DC 1 0.1 TC=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 1000 100 125 150 175 Drain Current Safe Operation Area 10000 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 15 IDS=45A 13 10 8 5 3 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 Single Pulse RθJC=0.8°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 4 www.ruichips.com RU8590R Typical Characteristics Output Characteristics 180 150 RDS(ON) - On Resistance (mΩ) 8,9,10V ID - Drain Current (A) Drain-Source On Resistance 20 6V 120 5V 90 4V 60 30 3V 0 0 1 2 3 4 18 15 13 10 8 VGS=10V 5 3 0 5 0 30 VDS - Drain-Source Voltage (V) 120 Source-Drain Diode Forward 100 VGS=10V ID=45A 2.0 IS - Source Current (A) Normalized On Resistance 90 ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=5.8mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 4800 4200 Ciss 3000 2400 1800 1200 Coss 600 Crs s 0 1 1 1.2 1.4 Gate Charge 6000 3600 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 5400 0.6 10 100 10 VDS=68V IDS=45A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 20 40 60 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 5 www.ruichips.com RU8590R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 6 www.ruichips.com RU8590R Package Information TO220 E A E1 A1 p Q H1 L2 θ1 P1 D DEP D1 θ2 θ1 L1 b2 L b C A2 e e1 E2 SYMBOL A A1 A2 b b2 c D D1 DEP E E1 E2 MM MIN 4.40 1.20 2.23 0.75 1.17 0.40 15.40 8.96 0.05 9.66 * 9.80 NOM 4.55 1.30 2.38 0.80 1.28 0.50 15.60 9.21 0.13 9.97 8.70 10.00 INCH MAX 4.70 1.40 2.53 0.85 1.39 0.60 15.80 9.46 0.20 10.28 * 10.20 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 MIN 0.173 0.047 0.088 0.030 0.046 0.016 0.606 0.353 0.002 0.380 * 0.386 NOM 0.179 0.051 0.094 0.031 0.050 0.020 0.614 0.363 0.005 0.393 0.343 0.394 MAX 0.185 0.055 0.100 0.033 0.055 0.024 0.622 0.372 0.008 0.405 * 0.402 7 SYMBOL Φp1 e e1 H1 L L1 L2 Φp Q θ1 θ2 MM MIN 1.40 6.40 12.70 * 3.50 2.73 5° 1° NOM 1.50 2.54 BSC 5.08 BSC 6.50 13.18 * 2.50 REF 3.60 2.80 7° 3° INCH MAX 1.60 MIN 0.055 6.60 13.65 3.95 0.252 0.500 * 3.70 2.87 9° 5° 0.138 0.107 5° 1° NOM 0.059 0.10 BSC 0.20 BSC 0.256 0.519 * 0.098 REF 0.142 0.110 7° 3° MAX 0.063 0.260 0.537 0.156 0.146 0.113 9° 5° www.ruichips.com RU8590R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 8 www.ruichips.com