RUH30150M

RUH30150M N-Channel Advanced Power MOSFET Features Pin Description • 30V/150A, RDS (ON) =0.9mΩ(Typ.)@VGS=10V RDS (ON) =1.4mΩ(Typ.)@VGS=4.5V D D D D • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G SS PIN1 PIN1 PDFN5060 D Applications • DC/DC Converters • On board power for server • Synchronous rectification G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 600 A TC=25°C 150 TC=100°C 95 TA=25°C 44 TA=70°C 35 TC=25°C 126 TC=100°C 50 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA ③ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 1 A W www.ruichips.com RUH30150M Parameter Symbol Unit 0.99 °C/W 30 °C/W 400 mJ Thermal Resistance-Junction to Case RJC RJA Rating ③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Test Condition Parameter RUH30150M Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1 µA 2.5 V ±100 nA VGS=4.5V, IDS=35A 1.4 1.8 mΩ VGS=10V, IDS=50A 0.9 1.3 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 16 ns 26 nC 1.3 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss VGS=0V, VDS=15V, Frequency=1.0MHz Reverse Transfer Capacitance 78 td(ON) Turn-on Delay Time 12 tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time VDD=15V,IDS=50A, VGEN=10V,RG=4.7Ω Turn-off Fall Time 6980 3250 14 68 pF ns 28 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10V, IDS=50A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 107 18 nC 29 2 www.ruichips.com RUH30150M Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 50A. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =40A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RUH30150M RUH30150M PDFN5060 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 13'' 12mm www.ruichips.com RUH30150M Typical Characteristics Power Dissipation 140 160 120 140 ID - Drain Current (A) PD - Power (W) Drain Current 180 100 120 80 100 60 40 20 80 60 40 20 0 VGS=10V 0 0 25 50 75 100 125 150 25 50 Safe Operation Area RDS(ON) limited ID - Drain Current (A) 1000 100 10 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 100 125 150 TJ - Junction Temperature (°C) 10 RDS(ON) - On - Resistance (mΩ) TJ - Junction Temperature (°C) 75 Drain Current 5 Ids=50A 4 3 2 1 0 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=0.99°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 4 www.ruichips.com RUH30150M Typical Characteristics Output Characteristics VGS=10V，8V，7V 200 5V 150 3V 100 50 2V 0 0 1 2 3 4 Drain-Source On Resistance 5 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 250 4 3 4.5V 2 1 10V 0 0 30 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=0.9mΩ 0.0 -50 -25 0 25 50 75 100 125 10 TJ=150°C 0.1 0.2 150 VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 8000 Ciss Coss 2000 Crss 1 10 VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 5 0.6 0.8 1 1.2 1.4 Gate Charge 10000 0 0.4 VSD - Source-Drain Voltage (V) Capacitance 4000 TJ=25°C 1 TJ - Junction Temperature (°C) 6000 120 Source-Drain Diode Forward 100 VGS=10V IDS=50A 0.5 90 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 60 100 10 VDS=24V IDS=50A 9 8 7 6 5 4 3 2 1 0 0 50 100 150 QG - Gate Charge (nC) www.ruichips.com RUH30150M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 6 www.ruichips.com RUH30150M Package Information C F E R 4 0 . 0 2 D PDFN5060 H F E R 0 2 . 1 2 E E 1 E K 1 L L 1 L b e A n r e t t a P d n a L a e c n e r e f e R r o f y l n O ︵ ︶ 1 D 2 5 1 . 4 8 . 3 2 1 3 6 . 4 . 6 1 9 . 3 1 6 . 0 SYMBOL A b c D1 D2 E E1 E2 e H k L L1 a MM MIN 0.90 0.33 0.20 4.80 3.61 5.90 5.65 3.38 0.41 1.10 0.51 0.06 0° NOM 1.00 0.42 0.25 4.90 3.79 6.00 5.75 3.58 1.27 BSC 0.51 0.61 0.13 2 7 4 2 . . 4 1 7 2 . 1 INCH MAX 1.10 0.51 0.30 5.00 3.96 6.10 5.85 3.78 MIN 0.035 0.013 0.008 0.189 0.142 0.232 0.222 0.133 0.61 0.016 0.043 0.020 0.002 0° 0.71 0.20 12° Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 7 NOM 0.039 0.017 0.010 0.193 0.149 0.236 0.226 0.141 0.005 BSC 0.020 0.024 0.005 MAX 0.043 0.020 0.012 0.197 0.156 0.240 0.230 0.149 0.024 0.028 0.008 12° www.ruichips.com RUH30150M Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen City RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2017 8 www.ruichips.com