RUH3051M2

RUH3051M2 N-Channel Advanced Power MOSFET Features Pin Description • 30V/50A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V D D D D • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G SS PIN1 PIN1 PDFN3333 D Applications • DC/DC Converters • On board power for server • Synchronous rectification G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 200 A TC=25°C 50 TC=100°C 31 TA=25°C 19 TA=70°C 15 TC=25°C 34 TC=100°C 13 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA ③ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 1 A W www.ruichips.com RUH3051M2 Parameter Symbol RJC RJA ③ Rating Unit 3.72 °C/W 30 °C/W 42 mJ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Test Condition Parameter RUH3051M2 Min. Typ. Max. Unit Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V RDS(ON)⑤ Drain-Source On-state Resistance 30 30 1 µA 2 V ±100 nA VGS=4.5V, IDS=35A 6 8 mΩ VGS=10V, IDS=50A 4.2 5.5 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 9 ns 15 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.3 Ciss Input Capacitance 580 Coss Output Capacitance Crss VGS=0V, VDS=15V, Frequency=1.0MHz Reverse Transfer Capacitance 65 td(ON) Turn-on Delay Time 6 tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time VDD=15V,IDS=50A, VGEN=10V,RG=4.7Ω Turn-off Fall Time 130 12 16 pF ns 5 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10V, IDS=50A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 14 4 nC 5 2 www.ruichips.com RUH3051M2 Notes: ① ② ③ ④ ⑤ ⑥ Max current is limited by the source bonding. Pulse width limited by safe operating area. When mounted on 1 inch square copper board, t 10sec. Limited by TJmax, IAS =13A, VDD =24V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width300s, duty cycle2%. Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RUH3051M2 3051 PDFN3333 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 Packaging Quantity Reel Size Tape width Tape&Reel 3 5000 13'' 12mm www.ruichips.com RUH3051M2 Typical Characteristics Power Dissipation 40 ID - Drain Current (A) 35 PD - Power (W) Drain Current 60 30 25 20 15 10 5 50 40 30 20 10 0 VGS=10V 0 0 25 50 75 100 125 25 150 50 Safe Operation Area RDS(ON) limited ID - Drain Current (A) 1000 100 10 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) RDS(ON) - On - Resistance (mΩ) TJ - Junction Temperature (°C) 75 Drain Current 12 Ids=50A 9 6 3 0 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=3.72°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 4 www.ruichips.com RUH3051M2 Typical Characteristics Output Characteristics 10V 8V 60 5V 40 3V 20 2V 0 0 1 2 3 4 Drain-Source On Resistance 12 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 80 9 4.5V 6 3 10V 0 0 30 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=4.2mΩ 10 TJ=150°C -25 0 25 50 75 100 125 0.1 0.2 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 600 Ciss 400 300 200 Coss 100 Crss 0 1 10 VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 5 0.8 1 1.2 1.4 Gate Charge 800 500 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 700 TJ=25°C 1 0.0 -50 120 Source-Drain Diode Forward 100 VGS=10V IDS=50A 0.5 90 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 60 100 10 VDS=24V IDS=50A 9 8 7 6 5 4 3 2 1 0 0 5 10 15 QG - Gate Charge (nC) www.ruichips.com RUH3051M2 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 6 www.ruichips.com RUH3051M2 Package Information b C PDFN3333 L M D 1 D 3 D 2 D 1 L 2 E e H A ︵ e c n nr e r e e t f t e a PR r do nf ay l Ln 4 O . 0 θ ︶ 1 EE 0 6 . 0 5 6 . 0 2 7 . 0 5 5 . 3 8 9 . 1 5 2 . 0 0 8 . 2 SYMBOL A b c D D1 D2 D3 E MM MIN 0.70 0.25 0.10 3.25 3.00 1.78 * 3.20 NOM 0.75 0.30 0.15 3.35 3.10 1.88 0.13 3.30 INCH MAX 0.80 0.35 0.25 3.45 3.20 1.98 * 3.40 MIN 0.028 0.010 0.004 0.128 0.118 0.070 * 0.126 NOM 0.030 0.012 0.007 0.132 0.122 0.074 0.005 0.130 MAX 0.031 0.014 0.010 0.136 0.126 0.078 * 0.134 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 7 SYMBOL E1 E2 e H L L1 θ M MM MIN 3.00 2.39 0.30 0.30 * * * NOM 3.15 2.49 0.65BSC 0.40 0.40 0.13 10° * INCH MAX 3.20 2.59 0.50 0.50 * 12° 0.15 MIN 0.118 0.094 NOM 0.122 0.098 0.026BSC 0.012 0.016 0.012 0.016 * 0.005 * 10° * * MAX 0.126 0.102 0.020 0.020 * 12° 0.006 www.ruichips.com RUH3051M2 Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 8 www.ruichips.com