RUH30D18H

RUH30D18H N-Channel Advanced Power MOSFET Features Pin Description • 30V/18A, D2 D2 RDS (ON) =13mΩ(Typ.)@VGS=10V RDS (ON) =20mΩ(Typ.)@VGS=4.5V D1 • Ultra Low On-Resistance • High Switching Speed • Lead Free and Green Devices Available (RoHS Compliant) D1 G2 S2 G1 pin1 S1 SOP-8 Applications D1 • Power Management. • Switch Applications. • Load switch G1 D2 G2 S1 S2 Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 18 A TA=25°C 70 A TA=25°C 18 TA=70°C 14 TA=25°C 2.5 TA=70°C 1.6 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation IDP RqJC RqJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 50 °C/W - mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 1 www.ruichips.com RUH30D18H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RUH30D18H Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) VGS=0V, IDS=250µA V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1 µA 2.5 V ±100 nA VGS=10V, IDS=10A 13 18 mΩ VGS=4.5V, IDS=8A 20 26 mΩ 1.2 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=18A, VGS=0V ISD=18A, dlSD/dt=100A/µs 6 ns 11 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.2 Ciss Input Capacitance VGS=0V, 470 Coss Output Capacitance 130 Crss Reverse Transfer Capacitance VDS=15V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=15V,IDS=18A, 10 td(OFF) Turn-off Delay Time VGEN=10V,RG=3Ω 14 tf ns 5 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 19 4 Turn-off Fall Time Gate Charge Characteristics pF VDS=24V, VGS=10V, IDS=18A 12 3 nC 4 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 2 www.ruichips.com RUH30D18H Ordering and Marking Information Device Marking Package RUH30D18H RUH30D18H SOP-8 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 Packaging Quantity Reel Size Tape width Tape&Reel 3 2500 13’’ 12mm www.ruichips.com RUH30D18H Typical Characteristics RDS(ON) limited VGS=10V IDS=10A 10µs 100µs 1ms 10ms DC TA=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJA=50°C/W Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 4 www.ruichips.com RUH30D18H Typical Characteristics 10V 6V 4.5V 4V VGS=4.5V 3.5V 3V VGS=10V VGS=10V IDS=10A TJ=150°C TJ=25°C TJ=25°C Rds(on)=13mΩ Frequency=1.0MHz VDS=24V IDS=18A Ciss Coss Crss Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 5 www.ruichips.com RUH30D18H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 6 www.ruichips.com RUH30D18H Package Information SOP-8 θ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2018 7 www.ruichips.com