RUH30J51M

RUH30J51M Dual Symmetric N-Channel MOSFET Features Pin Description • 30V/50A, RDS (ON) =3.6mΩ(Typ.)@VGS=10V G2 S2 S2 S2 RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G1 2 S1/D D1 D1 D1 D1 PIN1 PDFN5*6 Applications • DC/DC Converters • On board power for server • Synchronous rectification Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 200 A TC=25°C 50 TC=100°C 31 TA=25°C 19 TA=70°C 15 TC=25°C 34 TC=100°C 13 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID ② Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 1 A W www.ruichips.com RUH30J51M Symbol Rating Unit 3.72 °C/W 30 °C/W 81 mJ Thermal Resistance-Junction to Case RJC RJA Parameter ③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) RUH30J51M Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current IDSS VGS(th) IGSS ⑤ RDS(ON) V 1 VDS=30V, VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1.2 µA 2.5 V ±100 nA VGS=10V, IDS=50A 3.6 5 mΩ VGS=4.5V, IDS=35A 5.5 7 mΩ 1.2 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 15 ns 8 nC 1 Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance VGS=0V, 580 Coss Output Capacitance 195 Crss Reverse Transfer Capacitance VDS=15V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf 23 4.4 VDD=15V, RL=0.47Ω, IDS=50A, VGEN=10V, RG=0.8Ω Turn-off Fall Time Gate Charge Characteristics pF 23 34 ns 12 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 24 VDS=24V, VGS=10V, IDS=50A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 2 3 nC 4 www.ruichips.com RUH30J51M Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =18A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RUH30J51M RUH30J51M PDFN5060 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 13'' 12mm www.ruichips.com RUH30J51M Typical Characteristics VGS=10V RDS(ON) limited Ids=50A DC 10µs 100µs 1ms TC=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJC=3.72°C/W Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 4 www.ruichips.com RUH30J51M Typical Characteristics 6，8，10V 4.5V 3V 4.5V 2.5V 10V VGS=10V ID=50A TJ=25°C TJ=150°C TJ=25°C Rds(on)=3.6mΩ Frequency=1.0MHz VDS=24V IDS=50A Ciss Coss Crss Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 5 www.ruichips.com RUH30J51M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 6 www.ruichips.com RUH30J51M Package Information PDFN5060 A b e 6 5 8 L1 7 L1 7 5 2 1 E2 0R EF H I Ø1 .2 J E1 E 6 D2 k 8 L C 1 2 3 4 4 F a 0.71 a 3 3.96 8 1. 27 6 5 0. 61 2.22 D1 7 0 1.09 1.95 1 A b c D1 D2 L1 E K I MM MIN 0.90 0.33 0.20 4.80 3.61 0.06 5.90 0.50 1.22 NOM 1.00 0.41 0.25 4.90 3.81 0.13 6.00 * 1.32 INCH MAX 1.10 0.51 0.30 5.00 3.96 0.20 6.10 * 1.42 MIN 0.035 0.013 0.008 0.189 0.142 0.002 0.232 0.019 0.048 NOM 0.039 0.016 0.010 0.193 0.150 0.005 0.236 * 0.051 MAX 0.043 0.020 0.012 0.197 0.156 0.008 0.240 * 0.055 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 7 SYMBOL E1 E2 e H L @ J F INCH MM MIN 5.70 2.02 3.05 4 2.92 1.20 SYMBOL 3 2 0.79 2.26 MAX 5.80 2.32 MIN 0.224 0.079 0.48 0.51 NOM 5.75 2.17 1.27BSC 0.58 0.61 0.018 0.020 NOM 0.226 0.085 0.05BSC 0.022 0.024 0.68 0.71 0° 0.40 2.87 * 0.50 3.07 12° 0.60 3.22 MAX 0.228 0.091 0.026 0.028 * 0.015 0.112 10° 0.019 0.12 12° 0.023 0.126 www.ruichips.com RUH30J51M Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2018 8 www.ruichips.com