2N7336

2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm (inches) 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS BVDSS 8 19.507 ± 0.432 (0.768 ± 0.017) 2.134 (0.084) 0.457 ± 0.102 (0.018 ± 0.004) ±100V N-CHANNEL P-CHANNEL 9.525 ± 0.635 (0.375 ± 0.025) 6.426 ± 0.305 (0.253 ± 0.012) 14 ID(cont) RDS(on) FEATURES 1A 0.7Ω -0.75A 1.4Ω 1 7 • AVALANCHE ENERGY RATED 1.422 ± 0.102 (0.056 ± 0.004) 2.54 (0.100) • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS • FOR AUTOMATIC INSERTION N-CHANNEL P-CHANNEL N-CHANNEL P-CHANNEL 1—Drain 1 2—Source 1 3—Gate 1 5—Gate 2 6—Source 2 7—Drain 2 8—Drain 3 9—Source3 10—Gate 3 12—Gate 4 13—Source 4 14—Drain 4 • SIMPLE DRIVE REQUIREMENTS • EASE OF PARALLELING • 2 N-CHANNEL/2 P-CHANNEL CO-PACKAGED HEXFETS P-CHANNEL ±20V -0.75A -0.5A -3A 1.4W 0.011W/°C 75mJ -5.5V/ns –55 to 150°C ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) N-CHANNEL VGS ID ID IDM PD EAS dv/dt TJ , Tstg RθJC RθJCA Gate – Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25°C) Continuous Drain Current (VGS = 10V , Tcase = 100°C) Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient ±20V 1.A 0.6A 4A 1.4W 0.011W/°C 75mJ 5.5V/ns –55 to 150°C 6.25°C/W 175°C/W Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 25V , L ≥ 112mH , RG = 25Ω , Peak IL = 1A , Starting TJ = 25°C 3) @ ISD ≤ 1A , di/dt ≤ 75A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 24Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 4/99 2N7336 IRFG6110 ELECTRICAL CHARACTERISTICS FOR N-CHANNEL (Tamb = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5VDS ID = 1A ID = 0.6A ID = 1A ID = 250µA IDS = 0.60A VDS = 0.8VDSS TJ = 125°C ID = 1mA Min. 100 Typ. Max. Unit V ∆BVDSS Temperature Coefficient of Reference to 25°C 0.13 0.70 0.80 2 0.86 25 250 100 –100 180 82 15 15 7.5 7.5 20 25 40 40 1 4 4 V / °C Ω V S(Ω µA nA )Ω( 4/99 VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS pF nC VDD = 50V ID = 1A RG = 24Ω ns SOURCE – DRAIN DIODE CHARACTERISTICS A V ns µC Diode Forward Voltage 1 Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time IS = 1.0A VGS = 0 IF = 1A TJ = 25°C TJ = 25°C Negligible 4.0 6.0 1.5 200 0.83 di / dt ≤ 100A/µs VDD ≤ 50V PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 2N7336 IRFG6110 ELECTRICAL CHARACTERISTICS FOR P-CHANNEL (Tamb = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance 1 Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current 2 Test Conditions VGS = 0 ID = –1mA VGS = –10V VGS = –10V VDS = VGS VDS ≥ –15V VGS = 0 VGS = -20V VGS = 20V VGS = 0 VDS = –25V f = 1MHz VGS = –10V VDS = 0.5VDS ID = –0.75A ID = –0.50A ID = –0.75A ID = –250µA IDS = –0.50A VDS = 0.8VDSS TJ = 125°C ID = –1mA Min. –100 Typ. Max. Unit V ∆BVDSS Temperature Coefficient of Reference to 25°C 0.098 1.4 1.73 –2 0.67 –25 –250 –100 –100 200 85 30 15 7 8 30 60 40 40 –0.75 –3 –4 V / °C Ω V S(Ω µA nA )Ω( 4/99 VGS(th) Gate Threshold Voltage 1 gfs IDSS IGSS IGSS pF nC VDD = –50V ID = –0.75A RG = 24Ω ns SOURCE – DRAIN DIODE CHARACTERISTICS A V ns µC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time IS = –0.75A VGS = 0 IF = –0.75A TJ = 25°C TJ = 25°C Negligible 4.0 6.0 –5.5 200 90 di / dt ≤ 100A/µs VDD ≤ –50V PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk