SDB65N03

S DP /B 65N03L S amHop Microelectronics C orp. S eptember , 2002 N -Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) TYP ID 65A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 8 @ V G S = 1 0V 12 @ V G S = 4 .5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S A BS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 65 195 65 75 0.5 -65 to 175 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 2 62.5 C /W C /W S DP /B 65N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =2 5 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 26A V GS = 4.5V, ID = 21A V DS = 10V, V GS = 10V V DS = 10V, ID = 26A Min Typ C Max Unit 30 10 V uA 100 nA 1 1.5 8 12 65 38 1350 625 190 3 9 V m ohm 4 ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 15 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd V DD = 15V, ID = 1A, V GS = 10V R GE N = 6 ohm V DS =10V, ID =65A,V GS =10V V DS =10V, ID =65A,V GS =4.5V V DS =10V, ID = 65A, V GS =10V 2 30 32 132 30 41 50 20.5 24.5 6.9 5.8 ns ns ns ns nC nC nC nC S DP /B 65N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0 V, Is =26A Min Typ Max Unit 0.9 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 80 V G S =10,9,8,7,6,5V 70 20 25 25 C T J =125 C ID , Drain C urrent(A) 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 V G S =3V V G S =4V I D , Drain C urrent (A) 15 -55 C 10 5 0 1 2 3 4 5 6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 3600 F igure 2. Trans fer C haracteris tics 2.2 V G S =10V I D =26A R DS (ON) , Normalized D rain-S ource On-R es is tance 3000 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) 2400 1800 C is s 1200 600 0 0 5 10 15 20 25 30 C os s C rs s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DP /B 65N03L 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 4 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 50 F igure 6. B reakdown V oltage V ariation with T emperature 50 gF S , T rans conductance (S ) Is , S ource-drain current (A) 40 30 20 V DS =10V 10 0 0 10 20 30 40 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 300 200 100 V G S , G ate to S ource V oltage (V ) I D , Drain C urrent (A) 8 6 4 2 0 0 6 V DS =10V I D =65A R D O S( L N) im it 1m 10 10 0 D C ms ms 10 0μ s s 10 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 1 10 30 60 12 18 24 30 36 42 48 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DP /B 65N03L 4 V IN D VG S R GE N G 90% V DD ton RL V OUT V OUT 10% toff tr 90% td(on) td(off) 90% 10% tf INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.01 1. 2. 3. 4. 1 10 100 P DM t1 t2 R θJ C ( t)=r (t) * R θJ C R θJ C =S ee Datas heet T J M-T C = P * R θJ C ( t) Duty C ycle, D=t1/t2 1000 10000 0.1 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5