SDD20N03L

SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES (mW) ID 35A RDS(ON) Max Super high dense cell design for low RDS(ON). 15 @ VGS = 10V 32 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C -Pulsed a Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 20 35 87 20 50 -55 to 175 Unit V V A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S DU/D20N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID =10A V GS = 4.5V, ID = 8A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A Min Typ Max Unit 30 10 100 1 1.5 13.5 23 55 25 930 400 120 3 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 15 m ohm 32 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS b V DD =15V, V GS = 0V f = 1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V ID =1A V GS = 10V V GE N = 6 ohm V DS = 15V,ID = 20A,V GS =10V V DS = 15V,ID = 20A,V GS =4.5V V DS = 15V, ID = 20A V GS =10V 30 20 34 10 26.5 13.5 4.8 5.4 ns ns ns ns nC nC nC nC S DU/D20N03L E L E C T R I C A L C H A R A C T E R I S T I C S ( T C =2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V, I s = 2 0 A M in T y p M a x U n it 1. 3 V D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S a N ote s a . P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . b. G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 60 V G S =10,9,8,7,6,5,4V 50 30 40 25 C I D , D ra in C urre nt ( A ) 40 30 20 10 0 0 1 2 3 4 5 6 V G S =3V I D , D ra in C urre nt ( A ) T j=125 C 20 10 -55 C 0 0 1 2 3 4 5 6 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 2400 1. 3 F igure 2 . T ra ns fe r C ha ra c te ris tic s R DS (ON) , Normalized D ra in-S ourc e , O n-R e s is ta nc e V G S =10V 1. 2 1. 1 1. 0 0. 9 0. 8 0. 7 T j=125 C 25 C -55 C 2000 C , C a pa c ita nc e ( pF ) 1600 1200 C is s 800 400 0 C os s C rs s 0 5 10 15 20 25 30 0 10 20 30 40 V D S , D ra in-to S ourc e V olta ge ( V ) I D , D ra in C urre nt( A ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture 3 S DU/D20N03L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 V DS =10V F igure 6. B reakdown V oltage V ariation with T emperature 40 gF S , T rans conductance (S ) Is , S ource-drain current (A) 50 40 30 20 10 0 0 5 10 15 20 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 100 50 10 R D V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS =15V I D =20A ON S( )L im it 10 10 ms 0m 1m s 1s s 1 DC 4 8 12 16 20 24 28 32 0.1 0.1 V G S =10V S ingle P ulse T c=25 C 1 10 30 60 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DU/D20N03L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R θJ A ( t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A ( t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DU/D20N03L 6 S DU/D20N03L 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S DU/D20N03L TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 10.3 ±0.1 K0 2.50 ±0.1 D0 ψ2 D1 ψ1.5 + 0.1 -0 E 16.0 0.3± E1 1.75 0.1± E2 7.5 ±0.15 P0 8.0 ±0.1 P1 4.0 ±0.1 P2 2.0 ±0.15 T 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N ψ97 ± 1.0 W 17.0 + 1.5 -0 T 2.2 H ψ13.0 + 0.5 - 0.2 K 10.6 S 2.0 ±0.5 G R V 8