SDM4435

S DM4435 S amHop Microelectronics C orp. J ul.27 2004 ver1.1 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -8A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = -10V 35 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G A BS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 25 -8 -40 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S DM4435 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -2 4 V, V G S = 0 V V G S = 2 5 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S = -1 0 V, I D = -8 . 0 A V G S = -4 . 5 V, I D = -5 . 0 A V D S = -5 V, V G S = -1 0 V V D S = -1 5 V, I D = - 8 . 0 A Min Typ C Ma x U nit -3 0 -1 100 -1 -1 . 6 15 22 -2 0 6 1199 362 137 -3 V uA nA V O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 20 m-ohm 35 m-ohm A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =-15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd 2 V D = -1 5 V, I D = -1 A , V G E N = - 1 0 V, R G E N = 6 - o hm V DS =-15V, ID=-8A , V G S =-10V V DS =-15V, ID=-8A , V G S =-4. 5V V DS =-15V, ID = -8A , V G S =-10V 17. 6 17. 4 169 95. 4 33. 6 17. 3 3. 3 8. 1 ns ns ns ns nC nC nC nC S DM4435 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0 V, Is =-1.7A Min Typ C Max Unit -0.74 -1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t