SDM4800

S DM4800 S amHop Microelectronics C orp. May, 2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 3 0V F E AT UR E S ( m W ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 18.5 @ V G S = 1 0V 33 @ V G S = 4 .5V R ugged and reliable. S urface Mount P ackage. S O-8 1 A BS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300ms Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 7 28 1 .7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S DM4800 E LE CTR ICAL CHAR ACTE R IS TICS (T A =2 5 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 9A V GS =4.5V, ID= 7A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 27.5 20 16 950 420 110 3 33 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 15.5 18.5 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V ID = 1A V GS = 10V R GE N = 6 ohm V DS =15V, ID =9A,V GS =10V V DS =15V, ID =9A,V GS =4.5V V DS =15V, ID = 9A V GS =10V 7 30 14 54 25.2 12 5.12 4.8 ns ns ns ns nC nC nC nC S DM4800 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 . 7 A M in T y p M a x U n it 5 0. 76 1. 1 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 25 V G S =10,9,8,7,6,5V 20 20 25 ID , D ra in C urre nt( A ) 15 I D , D ra in C urre nt ( A ) 25 C 15 10 V G S =4V 5 10 T j=125 C 5 -55 C 0 0. 0 0 0 0. 5 1 1. 5 2 2. 5 3 1. 0 2. 0 3. 0 4. 0 5. 0 6. 0 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s R DS (ON) , O n-R e s is ta nc e ( O hms ) 3000 2500 0. 030 F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =10V 0. 025 0. 020 T j=125 C 0. 015 25 C 0. 010 0. 005 0 -55 C C , C a pa c ita nc e ( pF ) 2000 1500 C is s 1000 500 0 0 5 10 15 20 25 30 C os s C rs s 0 5 10 15 20 V D S , D ra in-to S ourc e V olta ge ( V ) I D , D ra in C urre nt( A ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture 3 S DM4800 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 25 F igure 6. B reakdown V oltage V ariation with T emperature 40.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 20 20 15 10 5 0 0 5 10 V DS =15V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 L im it V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS =15V I D =9A 10 R (O DS N) 10m 100 ms s 11 DC 1s 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 30 50 4 8 12 16 20 24 28 32 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DM4800 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R θJ A ( t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A ( t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DM4800 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 6 S DM4800 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 7