SDM4952

S DM4952 S amHop Microelectronics C orp. March , 2003 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 50 @ V G S = -4.5V 75 @ V G S = -2.7V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 5 .3 21 2.5 2 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S DM4952 E LE CTR ICAL CHAR ACTE R IS TICS (T A =2 5 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = -250uA V GS =-4.5V, ID= -2.9A V GS =-2.7V, ID = -1.5A V DS = -5V, V GS = -4.5V V DS = -15V, ID = - 4.9A Min Typ C Max Unit -20 -1 V uA 100 nA -0.7 V 50 m-ohm 75 m-ohm -20 13 1190 700 250 A S PF PF PF ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =-10V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd V D = -10V, R L =10 ohm ID = -1A, V GE N = -4.5V, R GE N =6 ohm V DS =-10V, ID = - 1A, V GS =-4.5V 19 18 49 28 20 3.7 4.2 40 70 120 130 25 ns ns ns ns nC nC nC 2 S DM4952 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0 V, Is =-1.7A Min Typ C Max Unit -0.87 -1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t