SDU30N03L

SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). ID 30A RDS(ON) (mW ) TYP 11.5 @ VGS = 10V 17 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Symbol VDS VGS @TJ=125 C ID IDM IS PD TJ, TSTG Limit 30 20 30 90 30 50 0.3 -55 to 175 Unit V V A A A W W/ C C Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C/W C/W SDU/D30N03L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = +/-20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =15A VGS = 4.5V, ID = 12A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 10 V uA +/-100 nA 1 1.5 11.5 17 40 30 1200 530 150 3 14 21 V m ohm m ohm ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b VDD =15V, VGS = 0V f = 1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID =1A, VGS = 10V, RGEN = 6 ohm 5 65 67 90 34.4 ns ns ns ns nC nC nC VDS = 15V, ID = 15A, VGS =10V 5.1 7.7 SDU/D30N03L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = 25A Min Typ Max Unit 1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 60 VGS=10,9,8,7,6,5,4V 50 30 40 25 C 6 ID, Drain Current (A) 40 30 20 10 0 0 1 2 3 4 5 6 VGS=3V ID, Drain Current (A) Tj=125 C 20 10 -55 C 0 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 3000 1.3 Figure 2. Transfer Characteristics RDS(ON), Normalized Drain-Source, On-Resistance VGS=10V 1.2 Tj=125 C 1.1 1.0 0.9 0.8 0.7 25 C -55 C 2500 C, Capacitance (pF) 2000 1500 1000 Coss 500 Crss 0 0 5 10 15 20 25 30 Ciss 0 10 20 30 40 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 3 SDU/D30N03L BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250uA 6 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 60 VDS=10V Figure 6. Breakdown Voltage Variation with Temperature 40 gFS, Transconductance (S) Is, Source-drain current (A) 50 40 30 20 10 0 0 5 10 15 20 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 ID, Drain Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current 300 200 100 1m VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 VDS=15V ID=20A 10 RD S ( ON im )L it 10 s 10 0m s ms 1s DC 1 0.5 0.1 VGS=10V Single Pulse Tc=25 C 5 10 15 20 25 30 35 40 1 10 30 60 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 4 Figure 10. Maximum Safe Operating Area SDU/D30N03L VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 6 S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 SINGLE PULSE 0.01 10 -5 -4 -3 -2 -1 t2 1. R£cJA (t)=r (t) * R£cJA 2. R£cJA=See Datasheet 3. TJM-TA = PDM* R£cJA (t) 4. Duty Cycle, D=t1/t2 10 10 10 1 10 10 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5