STM4470E

STM4470E SamHop Microelectronics Corp. May. 15 2007 ver1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 9.5A RDS(ON) ( m ı Ω ) Max 12 @ VGS = 10V 15 @ VGS = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 9.5 39 1.7 2.5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 50 C /W STM4470E ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS =0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 40 1 10 1 1.7 10 12 20 25 1500 220 150 23 22 88 27 28 12.5 3 6 3 V uA uA V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 12 m ohm 15 m ohm A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c VDS =20V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) t tD(OFF) t Qg Qgs Qgd 2 VDD = 15V ID = 1A VGS = 10V RGEN = 6 ohm VDS =15V, ID = 10A,VGS =10V VDS =15V, ID = 10A,VGS =4.5V VDS =15V, ID = 10A VGS =10V ns ns ns ns nC nC nC nC STM4470E ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A Min Typ C Max Unit 0.73 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 60 50 VG S=3.5 V V G S =4V 40 VG S =10V 20 16 ID , Drain C urrent(A) I D , Drain C urrent (A) T j =125 C 12 30 20 10 0 V G S =3V 8 -55 C 4 25 C V G S =2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 24 1.75 Figure 2. Transfer Characteristics RDS(ON), On-Resistance Normalized 20 1.60 1.45 1.30 1.15 1.0 0 VGS=10V ID=10A RDS(on) (m ı ) 16 VGS=4.5V 12 8 4 1 1 VGS=4.5V ID=6A VGS=10V 10 20 30 40 50 60 0 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 3 Figure 4. On-Resistance Variation with Drain Current and Temperature S T M4470E B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 36 20.0 I D =10A 30 Is , S ource-drain current (A) R DS (on) ( m ı ) 10.0 24 18 12 75 C 6 0 25 C 125 C 125 C 75 C 25 C 0 2 4 6 8 10 1.0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM4470E 2400 10 VGS, Gate to Source Voltage (V) 2000 8 6 4 2 0 VDS=15V ID=10A C , C apacitance (pF ) 1600 1200 800 400 Crss 0 0 5 10 Ciss 6 Coss 15 20 25 30 0 4 8 12 16 20 24 28 32 VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Capacitance 600 TD(off) Tr TD(on) Figure 10. Gate Charge 50 10 ID, Drain Current (A) (O N) Lim it Switching Time (ns) 100 60 10 10 RD S Tf 10 ms 0m s 1 DC 1s 1 1 V DS =15V ,ID=1A V G S =10V 0.1 0.03 VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50 6 10 60 100 300 600 Rg, Gate Resistance (Ω) VDS, Drain-Source Voltage (V) Figure 11.switching characteristics 9 Figure 12. Maximum Safe Operating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 t2 1. RthJA (t)=r (t) * R JAth 2. R th =See Datasheet JA (t) 3. TJM-TA = PDM* R JA th 4. Duty Cycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 STM4470E PACKA GE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A 0.008TYP. e 0.05 TYP. B 0.016 TYP. A1 C H MILLIMETERS SYMBOLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INCHES MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 6 STM4470E SO-8 Tape and Reel Data SO-8 Carrier Tape unit: PACKAGE SOP 8N 150 A0 6.40 B0 5.20 K0 2.10 D0 1.5 (MIN) D1 E E1 1.75 E2 5.5 0.05 P0 8.0 P1 4.0 P2 2.0 0.05 T 0.3 0.05 1.5 + 0.1 - 0.0 12.0 0.3 SO-8 Reel UNIT: TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W W1 H K S 2.0 0.15 G R V 12.4+ 0.2 16.8- 0.4 12.75 + 0.15 7