STM4532

S T M4532 S amHop Microelectronics C orp. M a r. 3 0 , 2 0 0 5 V e r1 . 1 D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l) P R O D U C T S U MMA R Y (N-C hannel) V DS S 30V P R O D U C T S U MMA R Y (P -C hannel) V DS S -30V ID 5 .5A R DS (ON) ( m W ) Max ID -4.5A R DS (ON) ( m W ) Max 40@ V G S = 1 0V 50@ V G S = 4 .5V D1 8 55@ V G S = -10V 85@ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =1 2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG N - C ha nne l P - C ha nne l 30 20 5.5 23 1. 7 2. 0 -5 5 to 1 5 0 -30 20 -4 . 5 -18 -1 . 7 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R θJ A 62. 5 C /W 1 S T M4532 N -C ha nne l E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 6 A V G S =4 . 5 V , I D = 5 . 2 A V D S = 5 V, V G S = 1 0 V V D S = 1 0 V, I D = 6 . 0 A Min Typ C Ma x U nit 30 1 100 0. 8 28 40 15 6 510 155 127 1. 8 40 50 V uA nA V m ohm m ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e C IS S C OS S CRSS c V DS =8V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = 1 0 V, ID = 1A , V G E N = 4 . 5 V, R L = 10 ohm R G E N = 6 ohm V DS =10V, ID = 6A , V G S =4. 5V 2 15. 6 9. 7 26. 3 26. 9 9. 3 2. 5 3. 2 ns ns ns ns nC nC nC S T M4532 P -C ha nne l E L E C T R I C A L C H A R A C T E R I S T I C S ( T A = 2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S =-10V, ID = -4. 9A V G S =-4.5V, ID = -3.6A V D S = -5 V, V G S = -1 0 V V D S = -1 5 V, I D = - 4 . 9 A Min Typ C Ma x U nit -3 0 -1 100 -1 -1 . 5 45 75 -1 2 4 393 116 45 -2 . 5 V uA nA V O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 55 m ohm 85 m ohm A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =-15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D = -1 5 V, R L = 15 ohm I D = -1 A , V G E N = -1 0 V, R G E N = 6 ohm V DS =-15V, ID=-4. 9A , V G S =-10V V DS =-15V, ID=-4. 9A, V G S =-4. 5V V DS =-15V, ID = - 4. 9A , V G S =-10V 3 13 4. 7 47. 1 17 15. 6 7. 3 2. 4 3. 3 ns ns ns ns nC nC nC nC S T M4532 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 . 7 A N - C h V G S = 0 V , I s =- 1 . 7 A P - C h M in T y p M a x U n it 0. 77 1. 2 -0 . 8 2 -1 . 2 C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b V N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. N-C hannel ID , D ra in C urre nt( A ) 10 V G S =10,9,8,7,6,5,4,3V 8 20 25 I D , D ra in C urre nt ( A ) 6 15 4 2 0 V G S =1.5V 10 25 C 5 0 0. 0 T j=125 C -55 C 0 2 4 6 8 10 12 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 1200 1. 8 F igure 2 . T ra ns fe r C ha ra c te ris tic s R DS (ON) , O n-R e s is ta nc e Normalized 1000 1. 6 1. 4 1. 2 1. 0 0. 8 0. 6 -5 5 V G S =10V I D =6A C , C a pa c ita nc e ( pF ) 800 600 400 200 0 C os s 0 2 4 6 8 C rs s 10 12 C is s -2 5 0 25 50 75 100 125 V D S , D ra in-to S ourc e V olta ge ( V ) T J , J unc tion T e mpe ra ture ( C ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture 4 S T M4532 N-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 18 20 gF S , T rans conductance (S ) 12 9 6 3 0 0 5 10 15 20 25 V DS =10V Is , S ource-drain current (A) 15 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M4532 P -C hannel 25 -V G S =10,9,8,7,6,5,4,3V 20 16 20 25 C T j=125 C -I D , Drain C urrent (A) -I D , Drain C urrent (A) 15 12 -55 C 8 10 5 0 -V G S =1.5V 4 0 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance(Ohms ) ( Normalized) 600 500 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -55 V G S =-10V I D =-4.9A C , C apacitance (pF ) 400 300 200 C is s C os s 100 0 C rs s 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 6 S T M4532 P -C hannel V DS =V G S I D =-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.9 0.6 0.3 -50 -25 0 25 50 75 100 125 150 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -55 -25 0 25 50 75 100 125 150 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 10 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 T J =25 C gF S , T rans conductance (S ) 6 4 2 V DS =-15V 0 0 5 10 15 20 -Is , S ource-drain current (A) 8 10.0 1.0 0.0 0.5 1.0 1.5 2.0 2.5 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 7 S T M4532 N-C hannel V G S , G ate to S ource V oltage (V ) I D , Drain C urrent (A) 5 5 4 3 2 1 0 0 2 4 6 8 10 12 14 1 6 Q g, T otal G ate C harge (nC ) 50 V DS =10V I D =6A 10 RD S (O L N) im it 10 10 0m s ms 11 DC 1s 0.1 0.03 V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 30 50 V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P -C hannel -V G S , G ate to S ource V oltage (V ) 10 -I D , Drain C urrent (A) 40 8 6 4 2 0 0 V DS =-15V I D =-4.9A 10 RD ON S( )L im it 10m 100 ms s 11 DC 1s 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 8 S T M4532 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R θJ A ( t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A ( t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 S T M4532 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. 0.016 TYP. B A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 10 S T M4532 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 11