STM4963

S T M4963 S amHop Microelectronics C orp. P re limina ry Ma y. 2 0 2 0 0 4 D ua l P -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S -30V F E AT U R E S ( m W ) MAX ID -5A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 45 @ V G S = -10V 60 @ V G S = -4.5V R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge . D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =1 2 5 C b -P uls e d ( 3 0 0 us P uls e W idth) D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit -3 0 20 -5 -2 5 -1 . 7 2 -5 5 to 1 5 0 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 62. 5 C /W 1 S T M4963 E LE CTR ICAL CHAR ACTE R IS TICS (T A =2 5 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.8A V GS = -4.5V, ID = -2.0A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.3A Min Typ C Max Unit -30 -1 100 -1 -1.5 35 50 -20 5 709 176 86 -2.5 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 45 m-ohm 60 m-ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =-15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V D = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 -ohm V DS =-15V, ID=-5.3A,V GS =-10V V DS =-15V, ID=-5.3A,V GS =-4.5V V DS =-15V, ID = -5.3A, V GS =-10V 19.2 22.7 83.5 48.6 18.7 9.6 3.7 3.7 ns ns ns ns nC nC nC nC S T M4963 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0 V, Is =-1.7A Min Typ C Max Unit 5 -0.78 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t