STM6610

S T M6610 S amHop Microelectronics C orp. Dec. 11 2006 D ual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ( m Ω ) Max ID 8.5A R DS (ON) R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 19 @ V G S = 10V 28 @ V G S = 4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed b a S ymbol V DS VGS 25 C 70 C I DM IS PD T a=70 C ID N-Channel 30 20 8.5 6.5 40 1.7 2 Unit V V A A A A W Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a Operating J unction and S torage Temperature R ange T a= 25 C 1.44 TJ, TS TG -55 to 150 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M6610 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =8A V GS =4.5V, ID =5A V DS = 15V, V GS = 10V V DS = 10V, ID =8A Min Typ C Max Unit 30 1 10 1.0 1.8 15 20 20 15 620 180 110 3 19 V uA uA V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 28 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V, ID = 7A, R L=2.1 ohm, V GS = 10V, R GEN = 6 ohm V DS =15V, ID =8A,V GS =10V V DS =15V, ID =8A,V GS =4.5V V DS =15V, ID = 8A, V GS =10V 12 15.5 42 8 12.5 6.5 1.4 3.5 ns ns ns ns nC nC nC nC S T M6610 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol b Condition V GS = 0V, Is =1.7A Min Typ Max Unit 0.8 1.2 V C DRAIN-SOURCE DIODE CHARACTERISTICS VSD Notes a.Surface Mounted on FR4 Board,t 10sec. b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%. c.Guaranteed by design,not subject to production testing. 5 45 VGS=10V 36 VGS=4.5V 20 16 ID, Drain Current(A) ID, Drain Current (A) VGS=4V 27 VGS=3.5V 12 Tj=125 C 8 25 C 4 0 -55 C 18 VGS=3V 9 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 42 1.5 Figure 2. Transfer Characteristics R DS (ON) , On-R es is tance Normalized 35 1.4 1.3 1.2 1.1 1.0 0 V G S =4.5V I D =5A V G S =10V I D =8A R DS (on) ( m Ω) 28 V G S =4.5V 21 14 7 1 1 V G S =10V 9 18 27 36 45 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T M6610 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 48 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =8A Is , S ource-drain current (A) 40 10.0 R DS (on) ( m Ω) 32 125 C 24 16 75 C 8 0 25 C 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6610 V G S , G ate to S ource V oltage (V ) 900 750 10 8 6 4 2 0 V DS =15V I D =7A C, Capacitance (pF) Ciss 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance 250 Tr F igure 9. G ate C harge 50 10 R (O DS N) L im it S witching T ime (ns ) 10m 100 1s 100 60 10 I D , Drain C urrent (A) s T D(off) Tf T D(on) ms 1 DC 1 1 V DS =15V ,ID=7A V G S =10V 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance ( Ω) F igure 11.s witching characteris tics V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area 9 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T M6610 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 A 0.008 TYP. e 0.05 TYP. B 0.016 TYP. A1 C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1 .35 0.10 4.80 3.81 5.79 0.41 0 MAX 1 .75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 6 S T M6610 SO-8 Tape and Reel Data SO-8 Carrier Tape unit: PACKAGE SOP 8N 150 A0 6.40 B0 5.20 K0 2.10 D0 1.5 (MIN) D1 1.5 + 0.1 - 0.0 E 12.0 0.3 E1 1.75 E2 5.5 0.05 P0 8.0 P1 4.0 P2 2.0 0.05 T 0.3 0.05 SO-8 Reel UNIT: TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R V 7