STM6912

S T M6912 S amHop Microelectronics C orp. A ug, 1 8 2 0 0 5 ve r 1 . 2 D ua l N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S 3 0V F E AT U R E S ( m W ) Max ID 6A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 32 @ V G S = 1 0V 57 @ V G S = 4 .5V R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge . D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =1 2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 30 20 6 30 1. 7 2 -5 5 to 1 5 0 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 62. 5 C /W 1 S T M6912 E LE CTR ICAL CHAR ACTE R IS TICS (T A =2 5 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS = 4.5V,ID = 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 27 52 15 6 576 111 82 2.5 32 57 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 ohm R L = 1 5 ohm 7.8 11.6 15.3 16.5 12.5 6.3 2.0 2.8 ns ns ns ns nC nC nC nC V DS =15V, ID =2A,V GS =10V V DS =15V, ID =2A,V GS =4.5V V DS =15V, ID = 2A, V GS =4.5V S T M6912 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0 V, Is =1.7A Min Typ Max Unit 0.82 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 8 25 T j=125 C 20 V G S =10,9,8,7,6,5,4V 6 V G S =2.5V 25 C -55 C ID , Drain C urrent(A) I D , Drain C urrent (A) 15 4 10 2 V G S =1.5V 0 0 0.5 1 1.5 2 2.5 3 5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON) , On-R es is tance(Ohms ) 1200 1000 1.6 1.4 1.2 1.0 0.6 0.4 F igure 2. Trans fer C haracteris tics V G S =10V C , C apacitance (pF ) V G S =10V I D =6A 800 600 400 200 0 0 5 10 15 20 25 30 C os s C rs s C is s 0 -50 -25 0 25 50 75 100 125 150 T j=( C ) V DS , Drain-to S ource Voltage (V ) I D , Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R es is tance Variation with D rain C urrent and Temperature 3 S T M6912 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 10 (O DS N) L im it V G S , G ate to S ource V oltage (V ) V DS =15V I D =2A I D , Drain C urrent (A) R 10m 100 ms s 11 DC 1s 0.1 0.03 0.1 V G S =10V S ingle P ulse T A =25 C 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S T M6912 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R qJ A ( t)=r (t) * R qJ A R qJ A =S ee Datas heet T J M-T A = P DM* R qJ A ( t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T M6912 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. 0.016 TYP. B A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 6 S T M6912 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 7