S T M6920A
S amHop Microelectronics C orp. A pr, 0 8 . 2 0 0 5
D ua l N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor
P R O D U C T S U MMA R Y
V DS S
4 0V
F E AT U R E S
( m W ) Max
ID
5A
R DS (ON)
S upe r high de ns e c e ll de s ign for low R D S (O N ) .
35 @ V G S = 1 0V 62 @ V G S = 4 .5V
R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge .
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d)
P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T a -P uls e d
b a
S ymbol V DS VGS 25 C 70 C ID IDM IS PD TJ, TS TG
L imit 40 20 5 4.2 20 1. 7 2 1. 44 -5 5 to 1 5 0
U nit V V A A A A W C
D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T a = 25 C T a =7 0 C
T H E R MA L C H A R A C T E R I S T I C S
T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA
1
62. 5
C /W
S T M6920A
N-C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted)
P a ra me te r
5
S ymbol
B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS
c
C ondition
V G S = 0 V , I D = 2 5 0 uA V D S = 3 2 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 6 A V G S =4 . 5 V , I D = 5 A V D S = 5 V, V G S = 1 0 V V D S = 5 V, I D = 6 A
Min Typ C Ma x U nit
40 1 V uA 1 0 0 nA 1
1.8
O F F C H A R A C T E R IS T IC S
D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge
O N C H A R A C T E R IS T IC S b
G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 3 V 24 45 15 10 759 92 70 V DD = 20V ID = 1 A V G S = 10V R G E N = 3 . 3 o hm V DS =20V, ID =6A , V G S =10V V DS =20V, ID =6A , V G S =4. 5V G a te -S ourc e C ha rge G a te -D ra in C ha rge Q gs Q gd V DS =20V, ID = 6 A V G S =10V
2
35 m ohm 62 m ohm A S
PF PF PF
D Y N A MI C C H A R A C T E R I S T I C S c
Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =25V, V G S = 0V f =1. 0MH Z
S W IT C H IN G C H A R A C T E R IS T IC S
T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge
tD(O N) tr tD(O F F ) tf Qg
9. 2 21 15. 5 4. 4 15. 9 7. 6 2. 2 4. 8
ns ns ns ns nC nC nC nC
S T M6920A
E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d)
P a ra me te r
5
D iode F orwa rd V olta ge
S y m bo l
VSD
C ondition
V G S = 0 V , I s =1 . 7 A
M in T y p M a x U n it
0. 8 1. 2 V
C
D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b
N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting.
20
V G S =10,8,5V
25
16
20 V G S =4V
ID , D ra in C urre nt( A )
I D , D ra in C urre nt ( A )
12
15
8 4 0
10 T j=125 C 5 25 C -55 C 3 4 5 6 0 0. 0
V G S =3V
0
2
4
6
8
10
12
1
2
V D S , D ra in-to-S ourc e V olta ge ( V )
V G S , G a te -to-S ourc e V olta ge ( V )
F igure 1 . O utput C ha ra c te ris tic s
2. 2 1500 1200 C is s 900 600 300 0 C rs s 0 5 10 15 20 25 30
F igure 2 . T ra ns fe r C ha ra c te ris tic s
V G S =10V I D =6A
R DS (ON) , O n-R e s is ta nc e ( N ormalized )
1. 8 1. 4 1. 0 0. 6 0. 2 0
C , C a pa c ita nc e ( pF )
C os s
-5 0
-2 5
0
25
50
75
100 125 T j( C )
V D S , D ra in-to S ourc e V olta ge ( V )
F igure 3 . C a pa c ita nc e
F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture
3
S T M6920A
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
18
F igure 6. B reakdown V oltage V ariation with T emperature
20 10
gF S , T rans conductance (S )
12 9 6 3 0 0 5 10 15 V DS =5V 20 25
Is , S ource-drain current (A)
15
1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10
I D , Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
50
V G S , G ate to S ource V oltage (V )
8 6 4 2 0 0
V DS =20V I D =6A
10
R
(O DS
N)
L im
it
10
10 0m s
ms
11
DC
1s
0.1 0.03
V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 50
2
4
6
8
10 12 14 16
Q g, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe O perating Area
4
S T M6920A
V DD ton toff tr
90%
5
VG S R GE N
V IN D G
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
90%
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
10
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1 P DM t1
on
0.1
0.05 0.02 0.01 1. 2. 3. 4.
t2
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
S T M6920A
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45 °
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
S Y MB OLS A A1 D E H L
MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0°
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8°
6
S T M6920A
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
PACKAGE SOP 8N 150㏕ A0
6.40
B0
5.20
K0
2.10
D0
ψ1.5 (MIN)
D1
ψ1.5 + 0.1 - 0.0
E
12.0 ±0.3
E1
1.75
E2
5.5 ±0.05
P0
8.0
P1
4.0
P2
2.0 ±0.05
T
0.3 ±0.05
SO-8 Reel
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
M
330 ±1
N
62 ±1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
ψ12.75 + 0.15
K
S
2.0 ±0.15
G
R
V
7
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