S T M6926
S amHop Microelectronics C orp. Mar.29 ,2007
D ual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S
( m ıΩ ) Max
ID
8.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
16 @ V G S = 10V 18 @ V G S = 4.5V
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID
Limit 40 20 8.5 7 32 1.7 2 1.44 -55 to 150
Unit V V A A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
R JA
62.5
C /W
STM6926
ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted)
Parameter
5
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
c
Condition
VGS =0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A
Min Typ C Max Unit
40 1 10 1 1.7 12 14 20 25 1500 220 145 23 22 88 27 28 12 3 6 3 V uA uA V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 16 m ohm 18 m ohm A S
PF PF PF
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
c
VDS =20V, VGS = 0V f =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) t tD(OFF) t Qg Qgs Qgd
2
VDD = 15V ID = 1A VGS = 10V RGEN = 6 ohm VDS =15V, ID = 10A,VGS =10V VDS =15V, ID = 10A,VGS =4.5V VDS =15V, ID = 10A VGS =10V
ns ns ns ns nC nC nC nC
S T M6926
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is =1.7A
Min Typ Max Unit
0.73 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
60 V G S =4V 50 VG S=4.5 V 40 30 20 10
V G S =2.5V VG S =10V
20
T j =125 C
ID , Drain C urrent(A)
I D , Drain C urrent (A)
15 -55 C 10
25 C
V G S =3V
5
0
0 0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
24 1.75
Figure 2. Transfer Characteristics
RDS(ON), On-Resistance Normalized
20
1.60 1.45 1.30 1.15 1.0 0
VGS=10V ID=10A
RDS(on) (m Ω ) ı
16 12
V G S =4.5V
V G S =10V 8 4 1 1
VGS=4.5V ID=6A
5
10
15
20
25
30
0
25
50
75
100
125
150
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
3
S T M6926
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
F igure 6. B reakdown V oltage V ariation with T emperature
36
20.0 I D =10A
30
Is , S ource-drain current (A)
R DS (on) ( m Ω ) ı
10.0
25 C
24 125 C 18 12 75 C 6 0 25 C
125 C
75 C
1.0
0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
STM6926
2400
10
VGS, Gate to Source Voltage (V)
2000
8 6 4 2 0
VDS=15V ID=10A
C , C apacitance (pF )
1600 1200 800 400 C rs s 0 0 5 10 15 C os s
C is s
6
20
25
30
0
3
6
9
12
15
18
21
24
VDS, Drain-to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 9. Capacitance
600
Tr
Figure 10. Gate Charge
50 10
ID, Drain Current (A)
(O N) Lim it
Switching Time (ns)
100 60 10
TD(off) Tf TD(on)
10
RD
S
10
ms
0m
s
1
DC
1s
1 1
V DS =15V ,ID=1A V G S =10V
0.1 0.03
VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50
6 10
60 100 300 600
Rg, Gate Resistance (Ω)
VDS, Drain-Source Voltage (V)
Figure 11.switching characteristics
9
Figure 12. Maximum Safe Operating Area
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
0.1 0.05 0.02 0.01
on
P DM t1 t2 1. RthJA (t)=r (t) * R JAth 2. R th =See Datasheet JA 3. TJM-TA = PDM* R JA th (t) 4. Duty Cycle, D=t1/t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
STM6926
PACKA GE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
0.008TYP.
e
0.05 TYP.
B
0.016 TYP.
A1
C
H
MILLIMETERS SYMBOLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INCHES MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
6
STM6926
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:
PACKAGE SOP 8N 150 A0
6.40
B0
5.20
K0
2.10
D0
1.5 (MIN)
D1
E
E1
1.75
E2
5.5 0.05
P0
8.0
P1
4.0
P2
2.0 0.05
T
0.3 0.05
1.5 + 0.1 - 0.0 12.0 0.3
SO-8 Reel
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
W1
H
K
S
2.0 0.15
G
R
V
12.4+ 0.2 16.8- 0.4 12.75 + 0.15
7
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