STM6960

STM6960 SamHop Microelectronics Corp. Nov 12 2007 Ver1.1 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V FEATURES ( m W ) Max ID 5A RDS(ON) Super high dense cell design for low RDS(ON). 60 @ VGS = 10V 75 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD TJ, TSTG Limit 60 20 5 4.3 25 1.7 2 1.44 -55 to 150 Unit V V A A A A W C Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 R JA 62.5 C /W STM6960 ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS 0V, ID 250uA VDS VGS 48V, VGS 0V 20V, VDS 0V Min Typ C Max Unit 60 1 100 1.0 1.8 47 55 20 12 700 80 50 5 13 10 28 7 15 7.5 1.6 4.3 3.0 60 75 V uA nA V m ohm m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance VDS VGS, ID = 250uA VGS 10V, ID 4.5A VGS 4.5V, ID 3A VDS = 5V, VGS = 10V VDS 5V, ID 4.5A A S PF PF PF DYNAMIC CHARACTERISTICS c Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ ohm SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) t tD(OFF) t Qg Qgs Qgd VDD = 30V ID = 4.5 A VGS = 10V RGEN = 3 ohm VDS =48V, ID =4.5A,VGS =10V VDS =48V, ID =4.5A,VGS =4.5V VDS =48V, ID = 4.5 A VGS =10V 2 ns ns ns ns nC nC nC nC S T M6960 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 . 7 A M in T y p M a x U n it 0. 8 1. 2 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 15 12 V G S =4.5V V G S =10V V G S =4V 9 V G S =3.5V 15 -55 C 12 25 C ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) 9 6 6 3 V G S =3V 0 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 3 0 0. 0 T j=125 C 0. 8 1. 6 2. 4 3. 2 4. 0 4. 8 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 90 2. 0 F igure 2 . T ra ns fe r C ha ra c te ris tic s R DS (ON) , O n-R e s is ta nc e N ormalized 75 1. 8 1. 6 1. 4 1. 2 1. 0 0 V G S =4.5V I D =3A V G S =10V I D =4.5A R D S ( o n ) ( m W) 60 45 30 15 1 V G S =4.5V V G S =10V 1 3 6 9 12 15 0 25 50 75 100 125 150 T j( C ) I D , D ra in C urre nt ( A ) T j, J unction T emperature ( C ) F igure 3 . O n-R e s is ta nc e vs . D ra in C urre nt a nd G a te V olta ge 3 F igure 4 . O n-R e s is ta nc e Va ria tion with D ra in C urre nt a nd Te mpe ra ture S T M6960 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 180 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =4.5A Is , S ource-drain current (A) 150 10.0 5.0 25 C R D S ( o n ) ( m W) 120 1 25 C 90 60 75 C 30 0 25 C 75 C 1 25 C 1.0 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 V G S , G a te -S ourc e V olta ge ( V ) V S D , B ody Diode F orward V oltage (V ) F igure 7 . O n-R e s is ta nc e vs . G a te -S ourc e V olta ge F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6960 V G S , G ate to S ource V oltage (V ) 1200 1000 10 8 6 4 2 0 V DS =48V I D =4.5A C , C a pa c ita nc e ( pF ) 800 600 400 200 0 0 C rs s 5 10 15 C is s 6 C os s 20 25 30 0 2 4 6 8 10 12 14 16 V D S , D ra in-to S ourc e V olta ge ( V ) Q g, T otal G ate C harge (nC ) F igure 9 . C a pa c ita nc e 600 S witching T ime (ns ) I D , Drain C urrent (A) F igure 10. G ate C harge 50 30 10 RD ( ) ON L im it 10 ms 100 60 10 S Tr Tf 10 1s DC 0m s 1 1 1 V D S =30V ,I D=4.5A V G S =10 V 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 60 6 10 6 0 1 00 30 0 60 0 R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T M6960 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 6 S T M6960 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 7