STM7820

S T M7820 S amHop Microelectronics C orp. A pr.21, 2005 N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S 2 5V F E AT U R E S ( m W ) Max ID 8A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 1 5 @ V G S = 1 0V 30 @ V G S = 4 .5V R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge . S O-8 1 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge R a ting D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T c=2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V s pike d V DS VGS ID IDM IS PD TJ, TS TG L imit 30 25 20 8 32 1. 7 2. 5 -5 5 to 1 5 0 U nit V V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a 1 R JA 50 C /W S T M7820 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S c C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 2 0 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 8 A V G S =4 . 5 V , I D = 5 A V D S = 1 0 V, V G S = 1 0 V V D S = 1 0 V, I D = 8 A Min Typ C Ma x U nit 25 1 V uA 100 nA 1 1. 8 20 30 12 960 240 140 3 30 V m ohm m ohm O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 11. 5 15 A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e C IS S C OS S CRSS c V DS =15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd 2 V D D = 1 5 V, ID = 1A , V G S = 1 0 V, R G E N = 6 ohm V DS =15V, ID =8A , V G S =10V V DS =15V, ID =8A , V G S =4. 5V V DS =15V, ID = 8A , V G S =10V 15. 3 32. 6 17. 8 6. 9 18. 1 9. 2 2. 5 4. 9 ns ns ns ns nC nC nC nC S T M7820 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r 5 D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 . 7 A M in T y p M a x U n it 0. 78 1. 2 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. d. G ua ra nte e d whe n e xte rna l R g=6 ohm a nd tf < tf ma x 20 15 V G S =4V V G S =4.5V 16 12 V G S =3.5V ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) V G S =10V 12 9 25 C 6 T j=125 C 3 0 0. 0 -55 C 8 V G S =3V 4 0 0 1 2 3 4 5 6 0. 7 1. 4 2. 1 2. 8 3. 5 4. 2 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 2. 2 1500 1200 900 600 300 C rs s 0 0 5 10 15 20 25 30 0 F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =10V I D =8A R DS (ON) , O n-R e s is ta nc e N ormalized C is s 1. 8 1. 4 1. 0 0. 6 0. 2 C , C a pa c ita nc e ( pF ) C os s -5 0 -2 5 0 25 50 75 100 125 T j( C ) V D S , D ra in-to S ourc e V olta ge ( V ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 3 S T M7820 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 18 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gF S , T rans conductance (S ) 12 9 6 3 0 0 3 6 9 V DS =10V 12 15 Is , S ource-drain current (A) 15 1 0 0.5 0.6 0.7 0.8 T J =25 C 0.9 1.0 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS =15V I D =8A 10 RD ON S( )L im it 10 10 0m s ms 11 1s DC 0.1 0.03 V G S =10V S ingle P ulse T c=25 C 0.1 1 10 25 50 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T M7820 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R qJ A ( t)=r (t) * R qJ A R qJ A =S ee Datas heet T J M-T A = P DM* R qJ A ( t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T M7820 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 6 S T M7820 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 7