STM8020

STM8020 SamHop Microelectronics Corp. Mar. 30 2007 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 35V F E AT UR E S ( m Ω ) Max ID 12A RDS(ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rotected. 9 @ VGS = 10V 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C ID Limit 35 20 12 9.6 48 1.7 2.5 Unit V V A A A A W Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C 1.6 T J , T S TG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 50 C /W 1 STM8020 ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS c Condition VGS =0V, ID = 250uA VDS=28V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 35 1 10 1 1.4 7.2 9.5 20 25 1400 3 9 V uA uA V m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 13 m ohm A S PF PF PF DYNAMIC CHARACTERISTICS c Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =20V, VGS = 0V f =1.0MHZ 255 145 19 20 77 40 VDS =15V, ID = 10A,VGS =10V VDS =15V, ID = 10A,VGS =4.5V Gate-Source Charge Gate-Drain Charge Qgs Qgd 2 SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) t tD(OFF) t Qg VDD = 15V ID = 1A VGS = 10V RGEN = 6 ohm ns ns ns ns nC nC nC nC 24 11 2.5 5.5 VDS =15V, ID = 10A VGS =10V STM8020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A Min Typ C Max Unit 0.73 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 100 VG S=4.5 V VG S =10V 20 V G S =4V VG S=3.5 V 16 T j =125 C 80 ID , Drain C urrent (A) I D , Drain C urrent (A) 60 V G S =3V 40 12 8 25 C -55 C 20 V G S =2.5V 4 0 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 18 Figure 2. Transfer Characteristics 1.75 RDS(ON), On-Resistance Normalized 15 1.60 1.45 1.30 1.15 1.0 0 VGS=4.5V ID=6A VGS=10V ID=10A R DS (on) ( m Ω) 12 9 VGS=4.5V VGS=10V 6 3 1 1 20 40 60 80 100 0 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 3 S T M8020 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.20 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 I D =250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 30 20.0 I D =10A Is , S ource-drain current (A) 25 10.0 R DS (on) ( m Ω) 20 15 10 75 C 5 0 25 C 125 C 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM8020 1800 1500 Ciss 10 VGS, Gate to Source Voltage (V) 8 6 4 2 0 VDS=15V ID=10A C , C apacitance (pF ) 1200 900 600 300 Crss 0 0 5 10 15 20 25 30 Coss 6 0 4 8 12 16 20 24 28 32 VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Capacitance 600 TD(off) Tr Figure 10. Gate Charge 50 10 ID, Drain Current (A) (O S N) Lim it Switching Time (ns) 100 60 10 10 RD Tf TD(on) 10 ms 0m s 1 DC 1s 1 1 V DS =15V ,ID=1A V G S =10V 0.1 0.03 VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50 6 10 60 100 300 600 Rg, Gate Resistance (Ω) VDS, Drain-Source Voltage (V) Figure 11.switching characteristics 9 Figure 12. Maximum Safe Operating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 t2 1. RthJA (t)=r (t) * R JAth 2. R th =See Datasheet JA (t) 3. TJM-TA = PDM* R JA th 4. Duty Cycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 STM8020 PACKA GE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A 0.008TYP. e 0.05 TYP. B 0.016 TYP. A1 C H SYMBOLS A A1 D E H L MILLIMETERS MIN 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INCHES MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 6 S T M8020 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 7