S T M8301
S amHop Microelectronics C orp.
A pr. 2 8 2 0 0 5 ve r1 . 1
D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l)
P R O DU C T
V DS S
30V
(N-C hannel)
R DS (ON) ( m W )
Max
P R O D U C T S U MMA R Y (P -C hannel)
V DS S
-30V
ID
7A
ID
-4.5A
R DS (ON) ( m W )
Max
25 @ V G S = 1 0V 42 @ V G S = 4 .5V
D1
8
60 @ V G S = -10V 80 @ V G S = -4.5V
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d)
P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T a -P uls e d
b a
S ymbol V DS VGS 25 C 70 C ID IDM IS PD TJ, TS TG
N - C ha nne l P - C ha nne l 30 20 7 6 29 1. 7 2 1. 44 -5 5 to 1 5 0 -30 20 -4 . 5 -3.8 -18 -1 . 7
U nit V V A A A A W C
D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T a = 25 C T a =7 0 C
T H E R MA L C H A R A C T E R I S T I C S
T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a
1
R JA
62. 5
C /W
S T M8301
N-C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted)
P a ra me te r
5
S ymbol
B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS
c
C ondition
V G S = 0 V , I D = 2 5 0 uA V D S = 2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 7 A V G S =4 . 5 V , I D = 5 A V D S = 1 0 V, V G S = 1 0 V V D S = 1 0 V, I D = 7 A
Min Typ C Ma x U nit
30 1 V uA 1 0 0 nA 1 1. 6 20 34 29 10 792 133 87 2. 5 V
O F F C H A R A C T E R IS T IC S
D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge
O N C H A R A C T E R IS T IC S b
G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 25 m ohm 42 m ohm A S
PF PF PF
D Y N A MI C C H A R A C T E R I S T I C S c
Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =15V, V G S = 0V f =1. 0MH Z
S W IT C H IN G C H A R A C T E R IS T IC S
T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge
tD(O N) tr tD(O F F ) tf Qg Q gs Q gd
2
V DD = 15V ID = 1A V G S = 10V R G E N = 6 o hm V DS =15V, ID =7A , V G S =10V V DS =15V, ID =7A , V G S =4. 5V V DS =15V, ID = 7A , V G S =10V
6. 5 12. 9 17. 9 5. 2 13. 6 6. 8 2. 0 3. 5
ns ns ns ns nC nC nC nC
S T M8301
P -C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A =25 C unles s otherwis e noted)
P a ra me te r O F F C H A R A C T E R IS T IC S
D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS
c
S ymbol
C ondition
V G S = 0 V , I D = - 2 5 0 uA V D S = -2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S =-10V, ID = -4. 5A V G S = -4. 5V, ID= -3A V D S = -1 0 V, V G S = -1 0 V V D S = -1 0 V, I D = - 4 . 5 A
Min Typ C Ma x U nit
-3 0 -1 V uA 1 0 0 nA -1 -1 . 5 50 70 -1 8 9 586 122 78 -2 . 5 V
O N C H A R A C T E R IS T IC S b
G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 60 m ohm 80 m ohm A S
PF PF PF
D Y N A MI C C H A R A C T E R I S T I C S c
Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =-15V, V G S = 0V f =1. 0MH Z
S W IT C H IN G C H A R A C T E R IS T IC S
T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge
tD(O N) tr tD(O F F ) tf Qg Q gs Q gd
V D D = -1 5 V I D = -1 A V G E N = -1 0 V R G E N = 6 o hm V DS =-15V, ID=-4. 5A , V G S =-10V V DS =-15V, ID=-4. 5A , V G S =-4. 5V V DS =-15V, ID = - 4. 5A , V G S =-10V
3
5. 6 4. 7 51. 8 33. 5 11. 2 5. 4 1. 4 2. 7
ns ns ns ns nC nC nC nC
S T M8301
E L E C T R I C A L C H A R AC T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d )
Parameter
Diode Forward Voltage
Sy m b o l
b
Co n d i t i o n
VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch
Min Typ Max Unit
0.79 -0.8 1.2 -1.2
C
D R A I N - S O U R C E D I O D E C H A R AC T E R I S T I C S
V SD
V
N o te s a.Surface Mounted on FR4 Board, t<10sec. * R JA is 62.5 C/W when mounted on 1in2 FR-4 board with 2oz Copper * R JA is 125 C/W when mounted on 0.02 in2 FR-4 board with 2oz Copper b.Pulse Test:Pulse Width<300μs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
N-Channel
20 16 VGS=10V VGS=4.5V VGS=5V 25 VGS=4V 25 C
5
20
I D , D r a i n Cu r r e n t ( A )
12
ID, Drain Current (A)
15
8
VGS=3V
10 Tj=125 C 5 -55 C 0 0.0
4
VGS=2.5V 0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage ( V )
VGS, Gate-to-Source Voltage ( V )
Figure 1. Output Characteristics
1200 1000 Ciss 2.2
Figure 2. Transfer Characteristics
V G S =10V I D =7A
R DS (ON) , O n-R e s is ta nc e ( N orma liz e d)
1.8 1.4 1.0 0.6 0.4 0 -50
C, Capacitance (pF)
800 600 400 200 0 0 5 Coss Crss 10 15 20 25 30
-25
0
25
50
75
100
125 150 Tj( C)
VDS, Drain-to Source Voltage ( V )
Figure 3. Capacitance
Figure 4. On-Resistance Variation with Drain Current and Temperature
4
S T M8301
N-C hannel
5
B V DS S , Normalized Drain-S ource B reakdown V oltage
V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =250uA
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igur e 5. G ate T hr eshold V ar iation with T emper atur e
20
F igur e 6. B r eak down V oltage V ar iation with T emper atur e
20.0
gF S , T rans conductance (S )
Is , S ource-drain current (A)
20
16 12 8 4 0 0 5 10 V DS =10V 15
10.0
1.0 0.4 0.6 0.8 1.0 1.2 1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent
F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent
5
S T M8301
P-C hannel
20 -V G S =7V -V G S =4V 16 20 -55 C 15 T j=125 C
-I D , D ra in C urre nt ( A )
-V G S =4.5V
-I D , D ra in C urre nt ( A )
-V G S =10V
25 C
12 -V G S =3.5V
10
8 4 0
5
-VGS=3V 0 0. 5 1. 5 3
1 0
1
2
2. 5
0
0. 9
1. 8
2. 7
3. 6
4. 5
5. 4
-V D S , D ra in-to-S ourc e V olta ge ( V )
-V G S , G a te -to-S ourc e V olta ge ( V )
F i gur e 1. O utput C har acter i sti cs
F i gur e 2. T r ansf er C har acter i sti cs
900 750
2.2 1.8 C is s
V G S =-10V I D =-4.5A
C , C a pa c ita nc e ( pF )
RDS(ON), On-Resistance ( N orma liz e d)
600 450 300 C os s 150 C rs s 0 0 5 10 15 20 25 30
1.4 1.0 0.8 0.4 0 -50
-25
0
25
50
75 100 125 150 Tj=( C )
-V D S , D ra in-to S ourc e V olta ge ( V )
T j, J unction T emperature ( C )
F i gur e 3. C apaci tance
F i gur e 4. O n-R esi stance V ar i ati on wi th T emper atur e
6
S T M8301
P-C hannel
5
B V DS S , Normalized Drain-S ource B reakdown V oltage
V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =-250uA
1.20 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 I D =-250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igur e 5. G ate T hr eshold V ar iation with T emper atur e
15
F igur e 6. B r eak down V oltage V ar iation with T emper atur e
20.0
gF S , T rans conductance (S )
-Is , S ource-drain current (A)
20
12 9 6 3 0 0 5 10 V DS =-10V 15
10.0
1.0 0.4 0.6 0.8 1.0 1.2 1.4
-I DS , Drain-S ource C urrent (A)
-V S D , B ody Diode F orward V oltage (V )
F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent
F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent
7
S T M8301
N-C hannel
V G S , G ate to S ource V oltage (V )
10
I D , Drain C urrent (A)
40
5
8 6 4 2 0 0
V DS =15V I D =7A
10
R
(O DS
N)
L im
it
10
1s
10m
s
0m
s
11
DC
0.1 0.03
V G S =10V S ingle P ulse T A =25 C 0.1 1 10 30 50
3
6
9
12
15
18
21 24
Q g, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igur e 9. G ate C har ge
F igur e 10. M aximum Safe O per ating A r ea
P-C hannel
-V G S , G ate to S ource V oltage (V )
10
-I D , Drain C urrent (A)
50
8 6 4 2 0 0
V DS =-15V I D =-4.5A
10
R DS
(O N
) L im
it
10 10 0m s
ms
11
1s
DC
0.1 0.03
V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50
2
4
6
8
10
12
14
16
Q g, T otal G ate C harge (nC )
-V DS , B ody Diode F orward V oltage (V )
F igur e 9. G ate C har ge
F igur e 10. M aximum Safe O per ating A r ea
8
S T M8301
V DD ton toff tr
90%
5
VG S R GE N
V IN D G
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
90%
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
N-C hannel
9 Normalized Transient 1
0.5 0.2
Thermal Resistance
0.1
0.1 0.05 0.02 0.01
on
P DM t1 1. 2. 3. 4. t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2
100
1000
P-C hannel
9
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1
0.1
0.05 0.02 0.01
on
P DM t1 1. 2. 3. 4. t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
S T M8301
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45 °
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
S Y MB OLS A A1 D E H L
MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0°
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8°
10
S T M8301
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
PACKAGE SOP 8N 150㏕ A0
6.40
B0
5.20
K0
2.10
D0
ψ1.5 (MIN)
D1
ψ1.5 + 0.1 - 0.0
E
12.0 ±0.3
E1
1.75
E2
5.5 ±0.05
P0
8.0
P1
4.0
P2
2.0 ±0.05
T
0.3 ±0.05
SO-8 Reel
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
M
330 ±1
N
62 ±1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
ψ12.75 + 0.15
K
S
2.0 ±0.15
G
R
V
11