STM8320

STM8320 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 30V PRODUCT SUMMARY (P-Channel) V DSS -30V ID 7.5A R DS(ON) (m Ω) Max 23 @ VGS=10V ID -6.0A R DS(ON) (m Ω) Max 35 @ VGS=-10V 55 @ VGS=-4.5V 35 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a N-Channel 30 ±20 TA=25°C TA=70°C 7.5 6.0 27 10 TA=25°C TA=70°C 2 1.28 P-Channel -30 ±20 -6.0 -4.8 -22 18 Units V V A A A mJ W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Sep,17,2008 1 www.samhop.com.tw STM8320 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=250uA VDS=24V , VGS=0V 30 VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=7.5A VGS=4.5V , ID=6.5A VDS=10V , ID=4.0A 1 1.8 18 26 14 3 23 35 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 420 130 78 pF pF pF VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=7.5A,VGS=10V VDS=15V,ID=7.5A,VGS=4.5V VDS=15V,ID=7.5A, VGS=10V 8 11 40 15 7.9 4.3 1.2 2.5 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b 1.3 0.78 1.3 A V VGS=0V,IS=1.3A Sep,17,2008 2 www.samhop.com.tw STM8320 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V -1 ±10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS=-24V , VGS=0V -30 VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-6.0A VGS=-4.5V , ID=-4.8A VDS=-10V , ID=-3.0A -1.0 -1.8 28 42 8.5 -3.0 35 55 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-15V,VGS=0V f=1.0MHz 860 225 135 15 18 63 15 16.8 8.5 1.7 3.5 pF pF pF ns ns ns ns nC nC nC nC SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-6.0A,VGS=-10V VDS=-15V,ID=-6.0A,VGS=-4.5V VDS=-15V,ID=-6.0A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b -1.2 -0.76 -1.2 A V VGS=0V,IS=-1.2A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ 300us, Duty Cycle < 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,VDD = 20V,VGS=10V,L=0.5mH. Sep,17,2008 3 www.samhop.com.tw S TM8320 Ver 1.0 N-Channel 35 VGS=10V VGS=4.5V VGS=5V 20 I D, Drain Current(A) 21 VGS=3.5V I D, Drain Current(A) 28 VGS=4V 16 12 14 8 Tj=125 C 4 0 -55 C 25 C 7 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 Figure 2. Transfer Characteristics 1.6 1.5 1.4 1.3 1.2 1.1 0.0 V G S =4.5V I D =6.5A V G S =10V I D =7.5A RDS(on)(m Ω) 40 30 20 VGS=10V 10 1 VGS=4.5V 1 R DS(on), On-Resistance Normalized 7 14 21 28 35 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 VDS=VGS ID=250uA 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Sep,17,2008 www.samhop.com.tw S TM8320 Ver 1.0 60 50 20.0 Is, Source-drain current(A) ID=7.5A 10.0 RDS(on)(m Ω) 40 30 20 75 C 125 C 25 C 125 C 75 C 25 C 10 0 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 8 6 4 2 0 0 Ciss 400 300 200 Coss 100 Crss 0 0 5 10 15 20 25 30 VDS=15V ID=7.5A 1 2 3 4 5 6 7 8 9 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 ) ON L im it 10 0u s 600 Switching Time(ns) 100 60 TD(off ) I D, Drain Current(A) Tr TD(on) Tf 10 RD S ( 1m 10 ms s 10 VDS=15V,ID=1A VGS=10V 1 V G S =10V S ingle P ulse T c=25 C DC 1 1 6 10 60 100 300 600 0.1 0.05 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,17,2008 5 www.samhop.com.tw STM8320 Ver 1.0 15V V(B R )DS S tp VDS L DR IV E R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit Figure 13a. Unclamped Inductive Waveforms Figure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Sep,17,2008 6 www.samhop.com.tw S TM8320 Ver 1.0 P-Channel 20 VGS=10V VGS=5V VGS=4.5V 12 VGS=3.5V 8 20 125 C VGS=4V I D, Drain Current(A) I D, Drain Current(A) 16 16 12 25 C 8 -55 C 4 0 4 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 90 75 Figure 2. Transfer Characteristics 1.5 1.4 1.3 1.2 1.1 1.0 0.9 VGS=-4.5V ID=-4.8A VGS=-10V ID=-6.0A RDS(on)(m Ω) 60 VGS=-4.5V 45 30 VGS=-10V 15 1 R DS(on), On-Resistance Normalized 1 4 8 12 16 20 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 ID=-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 VDS=VGS ID=-250uA 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature Sep,17,2008 www.samhop.com.tw S TM8320 Ver 1.0 100 90 20.0 Is, Source-drain current(A) I D =-6.0A 10.0 R DS(on)(m Ω) 80 60 125 C 40 20 0 75 C 25 C 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0 0.25 0.5 0.75 1.0 1.25 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 1000 10 V GS, Gate to Source Voltage(V) C, Capacitance(pF) Ciss 8 6 4 2 0 0 V DS =-15V I D =-6.0A 800 600 400 200 Crss Coss 0 0 5 10 15 20 25 30 3 6 9 12 15 18 21 24 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 250 Tr 80 L im it 10 10 1m s I D, Drain Current(A) Switching Time(ns) 100 60 10 TD(off) Tf 10 RD S ( ) ON 0u s TD(on) ms 1 V G S =10V S ingle P ulse T c=25 C DC 1 1 V DS =-15V,I D =-6.0A V GS =-10V 6 10 60 100 300 600 0.1 0.05 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,17,2008 8 www.samhop.com.tw STM8320 Ver 1.0 15V V(B R )DS S tp VDS L DR IV E R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit Figure 13a. Unclamped Inductive Waveforms Figure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Sep,17,2008 9 www.samhop.com.tw S TM8320 V er 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1 .35 0.10 4.80 3.81 5.79 0.41 0 MAX 1 .75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Sep,17,2008 10 www.samhop.com.tw S TM8320 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Sep,17,2008 11 www.samhop.com.tw