STM8360T

Green Product STM8360T Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 6.6A R DS(ON) (m Ω) Max 29 @ VGS=10V ID -5.5A R DS(ON) (m Ω) Max 42 @ VGS=-10V 65 @ VGS=-4.5V 45 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25°C TC=70°C N-Channel P-Channel -40 40 ±20 ±20 -5.5 6.6 5.3 33 16 -4.4 -31 19 2 1.28 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Nov,21,2008 1 www.samhop.com.tw STM8360T Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 VDS=VGS , ID=250uA VGS=10V , ID=6.6A VGS=4.5V , ID=5.3A VDS=5V , ID=6.6A 1.0 1.5 23 33 17 3 29 45 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 780 60 50 14 14 18.5 20 14 6.9 1.8 3.9 1.7 1.2 VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=6.6A,VGS=10V VDS=20V,ID=6.6A,VGS=4.5V VDS=20V,ID=6.6A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=1.7A Diode Forward Voltage b A V 0.77 Nov,21,2008 2 www.samhop.com.tw STM8360T Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS=-32V , VGS=0V -40 -1 ±100 V uA nA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-5.5A VGS=-4.5V , ID=-4.4A VDS=-5V , ID=-5.5A -1.0 -1.7 33 48 12 -3 42 65 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-20V,VGS=0V f=1.0MHz 980 135 90 12 17 82 35 20.7 11 1.5 6.2 pF pF pF ns ns ns ns nC nC nC nC VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-5.5A,VGS=-10V VDS=-20V,ID=-5.5A,VGS=-4.5V VDS=-20V,ID=-5.5A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1.7A -0.76 -1.7 -1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Nov,21,2008 3 www.samhop.com.tw S TM8360T Ver 1.0 N-Channel 40 V G S =10V V G S =4.5V V G S =4V 20 I D, Drain Current(A) V G S =3.5V 24 I D, Drain Current(A) 32 16 12 T j =125 C -55 C 8 4 0 25 C 16 V G S =3V 8 0 0 0.5 1 1.5 V G S =2.5V 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 72 60 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 V G S =10V I D =6.6A V G S =4.5V I D =5.3A RDS(on)(m Ω) 48 V G S =4.5V 36 24 V G S =10V 12 0 1 8 16 24 32 40 R DS(on), On-Resistance Normalized ID, Drain Current(A) Tj, Junction Temperature(° C ) 150 T j ( °C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 V DS =V G S I D =250uA 100 125 150 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Nov,21,2008 www.samhop.com.tw S TM8360T Ver 1.0 84 70 20.0 Is, Source-drain current(A) I D =6.6A 10.0 R DS(on)(m Ω) 56 42 28 75 C 14 0 25 C 125 C 5.0 125 C 75 C 25 C 0 2 4 6 8 10 1.0 0 0.4 0.8 1.2 1.6 2.0 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) 8 6 4 2 0 0 C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 V DS =20V I D =6.6A 2 4 6 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 100 L im it 10 0u I D, Drain Current(A) 10 Switching Time(ns) TD(off) Tf Tr TD(on) R (O DS N) 10 us 1m 10 ms s s 10 1 DC V DS =20V ,ID=1A 0.1 1 1 V G S =10V VGS=10V Single Pulse TA=25 C 1 10 40 6 10 60 100 0.1 Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,21,2008 5 www.samhop.com.tw S TM8360T Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Nov,21,2008 6 www.samhop.com.tw S TM8360T Ver 1.0 P-Channel 25 V G S =-4V -55 C 20 25 C -I D, Drain Current(A) V G S =-8V -I D, Drain Current(A) 20 V G S =-4.5V 16 15 V G S =-10V 12 V G S =-3V 10 8 T j=125 C 4 0 5 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 -V DS, Drain-to-Source Voltage(V) -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 V G S =-10V I D =-5.5A RDS(on)(m Ω) 80 60 40 V G S =-10V 20 0 V G S =-4.5V R DS(on), On-Resistance Normalized V G S =-4.5V I D =-4.4A 1 5 10 15 20 25 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 V DS =V G S I D =-250uA 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature Nov,21,2008 www.samhop.com.tw S TM8360T Ver 1.0 20.0 120 100 -Is, Source-drain current(A) ID=-5.5A 25 C 10.0 R DS(on)(m Ω) 80 60 40 25 C 20 0 125 C 75 C 5.0 125 C 1.0 0.4 0.6 75 C 0 2 4 6 8 10 0.8 1.0 1.2 1.4 -VGS, Gate-to-Source Voltage(V) -V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 1000 Ciss Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -VGS, Gate to Source Voltage(V) C, Capacitance(pF) 8 6 4 2 0 0 VDS=-20V ID=-5.5A 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 30 3 6 9 12 15 18 21 24 -V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 100 it 10 10 -I D, Drain Current(A) Switching Time(ns) 100 TD(off ) Tf Tr TD(on) 10 R (O DS N) L im 10 us 0u s 1 DC 1m s ms 10 1 1 VDS=-20V,ID=-1A VGS=-10V 3 10 100 0.1 VGS=-10V Single Pulse TA=25 C 1 10 40 0.1 Rg, Gate Resistance(Ω) -V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,21,2008 8 www.samhop.com.tw STM8360T Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Nov,21,2008 9 www.samhop.com.tw S TM8360T V er 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1 .35 0.10 4.80 3.81 5.79 0.41 0 MAX 1 .75 0.25 4.98 3.99 6.20 1.27 8 0.083g INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Notes SO-8 package weight Nov,21,2008 10 www.samhop.com.tw S TM8360T Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Nov,21,2008 11 www.samhop.com.tw