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STM8450A

STM8450A

  • 厂商:

    SAMHOP

  • 封装:

  • 描述:

    STM8450A - Dual E nhancement Mode Field Effect Transistor (N and P Channel) - SamHop Microelectronic...

  • 数据手册
  • 价格&库存
STM8450A 数据手册
S T M8450A S amHop Microelectronics C orp. J a n. 2 3 2 0 0 5 D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l) P R O D U C T S U MMA R Y (N-C hannel) V DS S 40V P R O D U C T S U MMA R Y (P -C hannel) V DS S -40V ID 5A R DS (ON) ( m W ) Max ID -4A R DS (ON) ( m W ) Max 35 @ V G S = 1 0V 62 @ V G S = 4 .5V D1 8 47 @ V G S = -10V 65 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T a -P uls e d b a S ymbol V DS VGS 25 C 70 C ID IDM IS PD TJ, TS TG N - C ha nne l P - C ha nne l 40 20 5 4.2 20 1. 7 2 1. 44 -5 5 to 1 5 0 -40 20 -4 -3.4 -16 -1 . 7 U nit V V A A A A W C D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T a = 25 C T a =7 0 C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 1 62. 5 C /W S T M8450A N-C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS Rg c C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 3 2 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 5 A V G S =4 . 5 V , I D = 4 A V D S = 5 V, V G S = 1 0 V V D S = 5 V, I D = 5 A Min Typ C Ma x U nit 40 1 V uA 1 0 0 nA 1. 0 2. 0 25 45 15 8. 5 800 150 98 3 6. 8 8. 4 16. 6 10. 5 15. 3 7. 7 3 3. 9 8 9 18 11 18 9 3. 6 4. 6 895 168 110 3. 0 35 62 V m ohm m ohm O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e G a te re s is ta nc e V DS =10V, V G S = 0V f =1. 0MH Z V G S =0V, V DS = 0V , f=1. 0MH Z V DD = 15V ID = 3 A V G S = 10V R G E N = 4 . 7 o hm V DS =24V, ID =5A , V G S =10V V DS =24V, ID =5A , V G S =4. 5V G a te -S ourc e C ha rge G a te -D ra in C ha rge Q gs Q gd V DS =24V, ID = 5 A V G S =4. 5V 2 ohm S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge tD(O N) tr tD(O F F ) tf Qg ns ns ns ns nC nC nC nC S T M8450A P -C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS Rg c C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -3 2 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S =-10V, ID= -4A V G S =-4. 5V, ID= -3A V DS = -5V, V G S =-10V V DS = -5V, ID= -4A Min Typ C Ma x U nit -4 0 -1 V uA 1 0 0 nA -0 . 8 -1 . 5 37 50 20 9. 5 1090 1297 205 240 125 145 3. 5 8. 7 19. 8 63. 7 26 19. 9 9. 8 2. 8 4. 2 10 23 75 30 23 11 3. 2 4. 9 -2 . 0 47 65 V m ohm m ohm O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e G a te re s is ta nc e V DS =-10V, V G S = 0V f =1. 0MH Z V G S =0V, V DS = 0V , f=1. 0MH Z V D D = -1 5 V I D = -2 . 2 A V G S = -1 0 V R G E N = 4 . 7 o hm V DS =-24V, ID =-4A, V G S =-10V V DS =-24V, ID =-4A,V G S =-4.5V G a te -S ourc e C ha rge G a te -D ra in C ha rge Q gs Q gd V DS =-24V, ID = -4 A V G S =-4. 5V 3 ohm S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge tD(O N) tr tD(O F F ) tf Qg ns ns ns ns nC nC nC nC S T M8450A E L E C T R I C A L C H A R AC T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d ) Parameter Diode Forward Voltage Sy m b o l V SD Co n d i t i o n VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.77 1.2 -1.2 C D R A I N - S O U R C E D I O D E C H A R AC T E R I S T I C S b V N o te s a.Surface Mounted on FR4 Board, t<10sec. b.Pulse Test:Pulse Width<300μs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. N-Channel 5 20 16 VGS=5V VGS=6V VGS=10V VGS=4.5V 25 20 I D , D r a i n Cu r r e n t ( A ) 12 ID, Drain Current (A) 15 -55 C 10 Tj=125 C 5 0 25 C 8 VGS=4V 4 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4 VDS, Drain-to-Source Voltage ( V ) VGS, Gate-to-Source Voltage ( V ) Figure 1. Output Characteristics 1200 1000 1.6 1.4 Ciss Figure 2. Transfer Characteristics RDS(ON), On-Resistance ( N orma liz e d) V G S =10V I D =5A C, Capacitance (pF) 800 600 400 200 Crss 0 0 5 1.2 1.0 0.8 0.6 0 -50 Coss 10 15 20 25 30 -25 0 25 50 75 100 125 150 Tj=( C ) VDS, Drain-to Source Voltage ( V ) T j, J unction T emperature ( C ) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8450A N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S T M8450A P-C hannel 20 -V G S =10V 16 -V G S =4V -V G S =4.5V 20 25 -I D , D ra in C urre nt ( A ) -V G S =8V 12 -VGS=3V 8 4 0 -I D , D ra in C urre nt ( A ) 15 10 T j=125 C 5 0 25 C 0 0. 7 1. 4 2. 1 2. 8 3. 5 4. 2 -55 C 0 0. 5 1 1. 5 2 2. 5 3 -V D S , D ra in-to-S ourc e V olta ge ( V ) -V G S , G a te -to-S ourc e V olta ge ( V ) F i gur e 1. O utput C har acter i sti cs F i gur e 2. T r ansf er C har acter i sti cs 1500 1250 1.8 1.6 C is s V G S =-10V I D =-4A RDS(ON), On-Resistance ( N orma liz e d) 25 30 C , C a pa c ita nc e ( pF ) 1000 750 500 250 0 C rs s 0 5 10 15 20 C os s 1.4 1.2 1.0 0.8 0 -50 -25 0 25 50 75 100 125 150 Tj=( C ) -V D S , D ra in-to S ourc e V olta ge ( V ) T j, J unction T emperature ( C ) F i gur e 3. C apaci tance F i gur e 4. O n-R esi stance V ar i ati on wi th T emper atur e 6 S T M8450A P-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =-5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8450A N-C hannel V G S , G ate to S ource V oltage (V ) 10 I D , Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS =24V I D =5A 10 RD S (O N) L im it 10 1s DC 10m 0m s s 11 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 50 60 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V G S , G ate to S ource V oltage (V ) 10 -I D , Drain C urrent (A) 50 8 6 4 2 0 0 V DS =-24V I D =-4A 10 R DS (O N) L im it 10 10 1s DC ms 11 0m s 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 50 60 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S T M8450A V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 10 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. 2. 3. 4. R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve S T M8450A PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 10 S T M8450A SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 11
STM8450A 价格&库存

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