STM8456

STM8456 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 6.2A R DS(ON) (m Ω) Max 33 @ VGS=10V ID -5.3A R DS(ON) (m Ω) Max 45 @ VGS=-10V 70 @ VGS=-4.5V 45 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage a N-Channel 40 ±20 TA=25°C TA=70°C d P-Channel -40 ±20 -5.3 -4.2 -22 16 2 1.28 Units V V A A A mJ W °C Drain Current-Continuous -Pulsed b 6.2 4.9 25 9 Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. May,29,2008 1 www.samhop.com.tw STM8456 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c a 40 1 ±100 uA nA VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=6.2A VGS=4.5V , ID=5.3A VDS=10V , ID=6.2A 1 1.5 26 33 13.8 3 33 45 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 580 82 50 pF pF pF VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=6.2A,VGS=10V VDS=20V,ID=5.3A,VGS=4.5V VDS=20V,ID=6.2A, VGS=10V 11 10.2 17.3 20 11.3 5.8 1.2 2.9 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b VGS=0V,IS=1.3A 0.79 1.2 V May,29,2008 2 www.samhop.com.tw STM8456 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c -40 -1 ±100 uA nA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-5.3A VGS=-4.5V , ID=-4.3A VDS=-10V , ID=-5.3A -1 -1.7 36 52 12 -3 45 70 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-20V,VGS=0V f=1.0MHz 980 135 90 12 17 82 35 20.7 11 1.5 6.2 pF pF pF ns ns ns ns nC nC nC nC SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-20V ID=-1A VGS=-10V RGEN=3.3 ohm VDS=-20V,ID=-5.3A,VGS=-10V VDS=-20V,ID=-4.3A,VGS=-4.5V VDS=-20V,ID=-5.3A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b VGS=0V,IS=-1.3A -0.78 -1.2 V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,VDD = 20V,Vgs=10V,L=0.5mH. May,29,2008 3 www.samhop.com.tw S TM8456 Ver 1.0 N-Channel 40 V G S =10V V G S =4.5V V G S =4V 20 I D, Drain Current(A) 24 V G S =3.5V I D, Drain Current(A) 32 16 12 T j =125 C -55 C 8 4 0 25 C 16 V G S =3V 8 V G S =2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 72 60 Figure 2. Transfer Characteristics 1.5 1.4 1.3 1.2 1.1 1.0 0.0 V G S =10V I D =6.2A V G S =4.5V I D =5.3A RDS(on)(m Ω) 48 36 24 12 0 V G S =4.5V V G S =10V R DS(on), On-Resistance Normalized 1 8 16 24 32 40 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 V DS =V G S I D =250uA 100 125 150 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature May,29,2008 www.samhop.com.tw S TM8456 Ver 1.0 84 70 20.0 RDS(on)(m Ω) 56 125 C 42 28 14 0 75 C 25 C Is, Source-drain current(A) I D =6.2A 10.0 125 C 75 C 1.0 25 C 0 2 4 6 8 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) 8 6 4 2 0 0 V DS =20V I D =6.2A 800 C is s 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 200 10 RD S( T D(off) I D, Drain Current(A) Switching Time(ns) 100 60 Tf Tr ) ON L im it 10 1m 10 0m 10 0u s us s 10 T D(on) 1 V G S =10V S ingle P ulse T c=25 C s DC 1 1 V DS =20V ,ID=1A V G S =10V 0.1 0.05 60 100 300 600 0.1 6 10 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area May,29,2008 5 www.samhop.com.tw STM8456 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 May,29,2008 6 www.samhop.com.tw S TM8456 Ver 1.0 P-Channel 25 V G S =-4V V G S =-4.5V V G S =-8V 20 25 C -55 C I D, Drain Current(A) I D, Drain Current(A) 20 16 15 V G S =-10V 12 10 V G S =-3V 8 T j=125 C 4 0 5 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 Figure 2. Transfer Characteristics 1.5 1.4 1.3 1.2 1.1 1.0 0.0 V G S =-4.5V I D =-4.3A V G S =-10V I D =-5.3A RDS(on)(m Ω) 80 60 40 V G S =-10V 20 0 V G S =-4.5V R DS(on), On-Resistance Normalized 1 5 10 15 20 25 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 V DS =V G S I D =-250uA 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature May,29,2008 www.samhop.com.tw S TM8456 Ver 1.0 120 100 20.0 R DS(on)(m Ω) 80 125 C 60 40 20 0 25 C 75 C Is, Source-drain current(A) I D =-5.3A 10.0 125 C 75 C 1.0 25 C 0 2 4 6 8 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 10 V GS, Gate to Source Voltage(V) C is s 1000 C, Capacitance(pF) 8 6 4 2 0 0 V DS =-20V I D =-5.3A 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 3 6 9 12 15 18 21 24 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance 400 T D(off) Tr Figure 10. Gate Charge I D, Drain Current(A) Switching Time(ns) 100 60 10 Tf T D(on) 10 R D S( ) ON L im it 10 1m 10 0u s us s 1 V G S =10V S ingle P ulse T c=25 C 10 0m DC s 1 1 V DS =-20V ,ID=-1A V G S =-10V 6 10 60 100 300 600 0.1 0.05 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area May,29,2008 8 www.samhop.com.tw STM8456 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 May,29,2008 9 www.samhop.com.tw S TM8456 V er 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1 .35 0.10 4.80 3.81 5.79 0.41 0 MAX 1 .75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 May,29,2008 10 www.samhop.com.tw S TM8456 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V May,29,2008 11 www.samhop.com.tw