STM8500

S T M8500 S amHop Microelectronics C orp. A rp, 2 0 2 0 0 5 ve r1 . 2 D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l) P R O D U C T S U MMA R Y (N-C hannel) V DS S 55V P R O D U C T S U MMA R Y (P -C hannel) V DS S -55V ID 4 .5A R DS (ON) ( m W ) Max ID -3A R DS (ON) ( m W ) Max 50 @ V G S = 1 0V 75 @ V G S = 4 .5V D1 8 110 @ V G S = -10V 145 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge R a ting D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T a -P uls e d b a S ymbol V s pike V DS VGS 25 C 70 C ID IDM IS PD TJ, TS TG d N - C ha nne l P - C ha nne l 60 55 20 4.5 3.8 20 1. 7 2 1. 44 -5 5 to 1 5 0 -60 -55 20 -3 -2.5 -15 -1 . 7 U nit V V V A A A A W C D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a T a = 25 C T a =7 0 C O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 1 62. 5 C /W S T M8500 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 4.5A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 5V, ID = 4.5A Min Typ C Max Unit 55 1 V uA 100 nA 1.4 2 35 60 15 9 900 80 60 2 15 5 27 10 19 9.5 4 3.6 45 11 60 23 25 13 6 5 1170 104 78 2.5 50 75 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 30V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =30V, ID =4.5A,V GS =10V V DS =30V, ID =4.5A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =30V, ID = 4.5 A V GS =4.5V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8500 P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = -250uA V DS = -44V, V GS= 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -3A V GS =-4.5V, ID= -2A V DS = -5V, V GS = -10V V DS = -5V, ID= -3A Min Typ C Max Unit -55 -1 V uA 100 nA -1.4 -1.6 87 125 10 8 970 1261 60 40 2.5 20 8 95 22 20 9 5 3 60 17 209 50 26 12 7 4 80 60 -2.5 V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 110 m ohm 145 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =-30V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = -30V R L = 15 ohm V GS = -10V R GE N = 6 ohm V DS =-30V, ID =-3A,V GS =-10V V DS =-30V, ID =-3A,V GS =-4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =-30V, ID = -3 A V GS =-4.5V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8500 E L E C T R I C A L C H A R AC T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d ) Parameter Diode Forward Voltage Sy m b o l V SD Co n d i t i o n VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.82 -0.84 1.2 -1.2 C D R A I N - S O U R C E D I O D E C H A R AC T E R I S T I C S b V N o te s a.Surface Mounted on FR4 Board, t＜10sec. b.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external Rg=6 ohm and tf < tf max N-Channel 20 VGS=10,9,8,7,6,5V 16 VGS=4V 25 25 C -55 C 5 20 I D , D r a i n Cu r r e n t ( A ) 12 ID, Drain Current (A) 15 Tj=125 C 10 8 4 VGS=3V 5 0 0 0 2 4 6 8 10 12 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage ( V ) VGS, Gate-to-Source Voltage ( V ) Figure 1. Output Characteristics 1500 1250 2.2 1.8 Figure 2. Transfer Characteristics V G S =10V I D =4.5A RDS(ON), On-Resistance (Normlized) C, Capacitance (pF) 1000 750 500 250 0 0 Crss 5 10 15 20 25 Ciss 1.4 1.0 0.8 0.4 0 -50 Coss 30 -25 0 25 50 75 100 125 150 Tj=( C ) VDS, Drain-to Source Voltage ( V ) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8500 N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S T M8500 P-C hannel 20 -V G S =5V 16 20 -V G S =10,9,8,7,6V 12 25 25 C -I D , D ra in C urre nt ( A ) -I D , D ra in C urre nt ( A ) T j=125 C 15 8 4 -V G S =4V 10 5 0 -VGS=3V 0 0 2 4 6 8 10 12 -55 C 0 0. 6 1. 2 1. 8 2. 4 3. 0 3. 6 -V D S , D ra in-to-S ourc e V olta ge ( V ) -V G S , G a te -to-S ourc e V olta ge ( V ) F i gur e 1. O utput C har acter i sti cs F i gur e 2. T r ansf er C har acter i sti cs 1200 1000 C is s 1. 8 1. 6 V G S =-10V I D =-3A C , C a pa c ita nc e ( pF ) RDS(ON), On-Resistance (Normlized) 800 600 400 200 0 C rs s 0 5 10 15 20 25 30 1. 4 1. 2 1. 0 0. 8 0. 6 -5 0 C os s 0 50 100 150 -V D S , D ra in-to S ourc e V olta ge ( V ) T j, J unction T emperature ( C ) F i gur e 3. C apaci tance F i gur e 4. O n-R esi stance V ar i ati on wi th T emper atur e 6 S T M8500 P-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =-5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8500 N-C hannel V G S , G ate to S ource V oltage (V ) 10 I D , Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS =30V I D =4.5A 10 R DS (O N) L im it 10m 10 1s DC s 0m s 11 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 50 60 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V G S , G ate to S ource V oltage (V ) 10 -I D , Drain C urrent (A) 50 8 6 4 2 0 0 V DS =-30V I D =-3A 10 R (O DS N) L im it 1m 10 10 DC s 11 ms 1s 0m s 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 50 60 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S T M8500 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM 0.05 0.02 0.01 on 0.1 t1 1. 2. 3. 4. t2 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 10 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. 2. 3. 4. R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve S T M8500 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. 0.016 TYP. B A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 10 S T M8500 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 11