STM8500A

S T M8500A S amHop Microelectronics C orp. A rp, 2 0 2 0 0 5 ve r1 . 1 D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l) P R O D U C T S U MMA R Y (N-C hannel) V DS S 55V P R O D U C T S U MMA R Y (P -C hannel) V DS S -55V ID 4 .5A R DS (ON) ( m W ) Max ID -3A R DS (ON) ( m W ) Max 60 @ V G S = 1 0V 95 @ V G S = 4 .5V D1 8 110 @ V G S = -10V 145 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge R a ting D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T a -P uls e d b a S ymbol V s pike d V DS VGS 25 C 70 C ID IDM IS PD TJ, TS TG N - C ha nne l P - C ha nne l 60 55 20 4.5 3.8 20 1. 7 2 1. 44 -5 5 to 1 5 0 -60 -55 20 -3 -2.5 -15 -1 . 7 U nit V V V A A A A W C D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a T a = 25 C T a =7 0 C O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 1 62. 5 C /W S T M8500A N-C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS Rg c C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 4 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =1 0 V , I D = 4 . 5 A V G S =4 . 5 V , I D = 4 A V D S = 5 V, V G S = 1 0 V V D S = 5 V, I D = 4 . 5 A Min Typ C Ma x U nit 55 1 V uA 1 0 0 nA 1. 0 2. 0 40 75 15 9 645 77 45 2 5. 5 9. 4 4. 4 6. 5 13 5. 1 14 7. 3 3 3. 5 767 90 53 3. 0 60 95 V m ohm m ohm O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e G a te re s is ta nc e V DS =25V, V G S = 0V f =1. 0MH Z V G S =0V, V DS = 0V , f=1. 0MH Z V DD = 30V ID = 1 A V G S = 10V R G E N = 6 o hm V DS =30V, ID =4. 5A, V G S =10V V DS =30V, ID =4. 5A, V G S =4. 5V G a te -S ourc e C ha rge G a te -D ra in C ha rge Q gs Q gd V DS =30V, ID = 4. 5 A V G S =4. 5V 2 ohm S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge tD(O N) tr tD(O F F ) tf Qg ns ns ns ns nC nC nC nC 11. 7 13. 8 11. 9 6. 2 2. 6 3 S T M8500A P -C hannel E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS Rg c C ondition V G S = 0 V , I D = - 2 5 0 uA V DS = -44V, V G S= 0V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S =-1 0 V , I D = - 3 A V G S =-4 . 5 V , I D = - 2 A V D S = -5 V, V G S = -1 0 V V DS = -5V, ID= -3A Min Typ C Ma x U nit -5 5 -1 V uA 1 0 0 nA -1 . 0 -1 . 6 85 110 10 7. 8 705 77 46 2. 5 6. 5 14. 3 43. 2 17. 7 7. 7 17 51 21 7. 7 2. 4 3 838 91 54 -2 . 5 V O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 110 m ohm 145 m ohm A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e G a te re s is ta nc e V DS =-30V, V G S = 0V f =1. 0MH Z V G S =0V, V DS = 0V , f=1. 0MH Z V D D = -3 0 V R L = 1 5 o hm V G S = -1 0 V R G E N = 6 o hm V DS =-30V, ID =-3A, V G S =-10V V DS =-30V, ID =-3A,V G S =-4.5V G a te -S ourc e C ha rge G a te -D ra in C ha rge Q gs Q gd V DS =-30V, ID = -3 A V G S =-4. 5V 3 ohm S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge tD(O N) tr tD(O F F ) tf Qg ns ns ns ns nC nC nC nC 13. 2 15. 7 6. 5 1. 98 2. 5 S T M8500A E L E C T R I C A L C H A R AC T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d ) Parameter Diode Forward Voltage Sy m b o l V SD Co n d i t i o n VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.79 1.2 -1.2 C D R A I N - S O U R C E D I O D E C H A R AC T E R I S T I C S b V N o te s a.Surface Mounted on FR4 Board, t＜10sec. b.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. d. G ua ra nte e d whe n e xte rna l R g=6 ohm a nd tf < tf ma x N-Channel 20 VGS=10V 16 VGS=6V VGS=8V VGS=5V 20 25 5 Cu r r e n t ( A ) 12 VGS=4.5V Cu r r e n t ( A ) D, D ra i n 15 8 VGS=4V 4 VGS=3V 0 10 Tj=125 C 5 0 25 C 0 1.0 2.0 3.0 -55 C D, D ra i n 0 0.5 1 1.5 2 2.5 3 4.0 5.0 6.0 VDS, Drain-to-Source Voltage ( V ) VGS, Gate-to-Source Voltage ( V ) Figure 1. Output Characteristics 900 750 1.8 1.6 Figure 2. Transfer Characteristics RDS(ON), On-Resistance (Normlized) Ciss V G S =10V I D =4.5A C, Capacitance (pF) 600 450 300 150 0 0 Crss 5 10 15 20 1.4 1.2 1.0 0.8 0 -50 Coss 25 30 -25 0 25 50 75 100 125 150 Tj=( C ) VDS, Drain-to Source Voltage ( V ) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8500A N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S T M8500A P-C hannel 20 -V G S =6V -V G S =8V -V G S =10V -V G S =4.5V -V G S =4V 25 20 16 -I D , D ra in C urre nt ( A ) -I D , D ra in C urre nt ( A ) 12 15 T j=125 C 10 -55 C 5 0 25 C 0 0. 8 1. 6 2. 4 3. 2 4. 0 4. 8 8 4 0 -VGS=3V 0 0. 5 1 1. 5 2 2. 5 3 -V D S , D ra in-to-S ourc e V olta ge ( V ) -V G S , G a te -to-S ourc e V olta ge ( V ) F i gur e 1. O utput C har acter i sti cs F i gur e 2. T r ansf er C har acter i sti cs 1200 1000 1. 8 1. 6 V G S =-10V I D =-3A R DS (ON) , O n-R e s is ta nc e ( N orma liz e d) C , C a pa c ita nc e ( pF ) 800 600 400 200 0 C rs s 0 5 10 15 C is s 1. 4 1. 2 1. 0 0. 8 0. 6 -5 0 C os s 20 25 30 0 50 100 150 -V D S , D ra in-to S ourc e V olta ge ( V ) T j, J unction T emperature ( C ) F i gur e 3. C apaci tance F i gur e 4. O n-R esi stance V ar i ati on wi th T emper atur e 6 S T M8500A P-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =-5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8500A N-C hannel V G S , G ate to S ource V oltage (V ) 10 I D , Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS =30V I D =4.5A 10 R DS (O N) L im it 10m 10 1s DC s 0m s 11 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 50 60 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V G S , G ate to S ource V oltage (V ) 10 -I D , Drain C urrent (A) 50 8 6 4 2 0 0 V DS =-30V I D =-3A 10 R (O DS N) L im it 1m 10 10 DC s 11 ms 1s 0m s 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 50 60 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S T M8500A V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM 0.05 0.02 0.01 on 0.1 t1 1. 2. 3. 4. t2 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 10 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. 2. 3. 4. R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve S T M8500A PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 10 S T M8500A SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 11