STS2301

S amHop Microelectronics C orp. S T S 2301 J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -3.4A R DS (ON) S uper high dense cell design for low R DS (ON ). 6 0 @ V G S = -4.5V 8 0 @ V G S = -2.5V 105 @ V G S = -1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 -3.4 -12 -1.25 1 .25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 2301 E LE CTR ICAL CHAR ACTE R IS TICS (T A =2 5 C unless otherwise noted) P arameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -4.0A V GS = -2.5V, ID = -2.0A V GS =-1.8V, ID = -1.0A On-S tate Drain Current Forward Transconductance ID(ON) g FS c S ymbol Condition Min Typ C Max Unit -20 1 100 -0.6 -0.85 -1.5 50 70 95 -20 5 926 183 141 60 80 105 V uA nA V m-ohm m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance V DS = -5V, V GS = -4.5V V DS = -5V, ID = -5A A S PF PF PF D YNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS = -15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd V DD = -10V, ID = -1A, V GS = -4.5V, R L = 10 ohm R GE N = 6 ohm V DS = -10V, ID = -3A, V GS = -4.5V 2 13.9 17.6 87.7 53.9 11.9 1.96 3.49 ns ns ns ns nC nC nC S T S 2301 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =-1.25A Min Typ Max Unit -0.795 -1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 -V G S =10.5~2.5V 25 25 C -55 C -ID , Drain C urrent(A) -I D , Drain C urrent (A) 8 20 6 15 T j=125 C 4 2 0 -V G S =1.5V 10 5 0 0.0 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON) , On-R es is tance(Ohms ) 2.2 1.8 1.4 1.0 0.6 0.2 0 F igure 2. Trans fer C haracteris tics V G S =-4.5V I D =-4A 1500 C , C apacitance (pF ) 1200 900 600 300 C os s 0 0 5 10 15 20 25 C rs s 30 C is s -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T S 2301 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =-250uA 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 18 F igure 6. B reakdown V oltage V ariation with T emperature 20 gF S , T rans conductance (S ) 12 9 6 3 0 0 5 10 15 V DS =-5V 20 25 -Is , S ource-drain current (A) 15 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 5 -I D , Drain C urrent (A) 4 3 2 1 0 0 V DS =-10V I D =-1A 10 RD ON S( )L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 V G S =-4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) - V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 2301 V DD ton V IN D VG S R GE N G 90% 5 toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 2301 A L G F M J B C I H E D (TYP .) 2.70 2.40 1.40 0.35 0 3.10 2.80 1.60 0.50 0.10 0.55 0.106 0.094 0.055 0.014 0 0.122 0.110 0.063 0.020 0.004 F G 0.45 1.90 REF. 1.00 0.10 0.40 0.45 0° 0.022 0.018 0.075 REF. 0.039 0.004 0.016 0.033 0° 0.051 0.008 0.045 10° I J L M 1.30 0.20 1.15 10° 6 S T S 2301 SOT-23 Tape and Reel Data SOT-23 Carrier Tape UNIT:㎜ PACKAGE SOT-23 A0 3.20 ±0.10 B0 3.00 ±0.10 K0 1.33 ±0.10 D0 ∮1.00 +0.25 D1 ∮1.50 +0.10 E 8.00 +0.30 -0.10 E1 1.75 ±0.10 E2 3.50 ±0.05 P0 4.00 ±0.10 P1 4.00 ±0.10 P2 2.00 ±0.05 T 0.20 ±0.02 SOT-23 Reel UNIT:㎜ TAPE SIZE 8㎜ REEL SIZE ∮178 M ∮178 ±1 N ∮60 ±1 W 9.00 ±0.5 W1 12.00 ±0.5 H ∮13.5 ±0.5 K 10.5 S 2.00 ±0.5 G ∮10.0 R 5.00 V 18.00 7