SamHop Microelectronics Corp.
STS2321
Oct .29 2004 V1.1
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
-20V
FEATURES
( m W ) Max
ID
-3.2A
RDS(ON)
Super high dense cell design for low RDS(ON).
65 @ VGS = -4.5V 90 @ VGS =-2.5V
Rugged and reliable. SOT-23 package.
D
SOT-23
D S G
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID M IS PD TJ, TSTG Limit -20 10 -3 . 2 -11 -1 . 2 5 1.25 -55 to 150 Unit V V A A A W C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a RthJA 100 C/W
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STS2321
ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) g FS CISS COSS CRSS
c
Symbol
Condition
VGS = 0V, ID = -250uA VDS = -16V, VGS= 0V VGS = 10V, VDS = 0V VDS = VGS, ID =-250uA VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.0A VDS = -5V, VGS = -4.5V VDS = -5V, ID = -3.2A
Min Typ C Max Unit
-20 1 100 -0.6 -0.9 -1.5 50 75 8 8 610 155 105 13.9 7.1 75.2 54 7.4 1.2 2.8 65 90 V uA nA V
m-ohm m-ohm
ON CHARACTERISTICS b
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHARACTERISTICS c
Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V f =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = -10V, ID = -1A, VGS = -4.5V, RL = 10 ohm RGEN = 6 ohm VDS = -10V, ID = -3.2A, VGS = -4.5V
ns ns ns ns nC nC nC
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STS2321
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
Symbol
V SD
Condition
VGS = 0V, Is =-1.25A
Min Typ Max Unit
-0.78 -1.2 V
C
DRAIN-SOURCE DIODE CHARACTERISTICS b
Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
20 -VGS=3V 25 20
- I D , D ra i n C u r r e n t ( A )
-ID, Drain Current (A)
16
-VGS=10,9,8,7,6,5,4V
-55 C 15 25 C 10 Tj=125 C 5 0 0.0
12 8 4 0 -VGS=2V
0
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
2.2 1000 1.8
Figure 2. Transfer Characteristics
VGS=-4.5V ID=-3.2A
C, Capacitance (pF)
RDS(ON), On-Resistance
25 30
800 600 400 200 Crss 0 0 5 10 15 20 Coss Ciss
(Normalized)
1.4 1.0 0.6 0.2 0
-50
-25
0
25
50
75
100 125 Tj( C)
-VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with Temperature
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BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 VDS=VGS ID=-250uA 1.10 ID=-250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
with Temperature
12
Figure 6. Breakdown Voltage Variation with Temperature
20
gFS, Transconductance (S)
8 6 4 2 0 VDS=-5V 0 5 10 15 20 25
-Is, Source-drain current (A)
10
10
1 0 0.4 0.6 0.8 1.0 TJ=25 C 1.2 1.4
-IDS, Drain-Source Current (A)
-VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current
-VGS, Gate to Source Voltage (V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
13
-ID, Drain Current (A)
5 4 3 2 1 0 0 1 2 3 4 5 6 7 8
Qg, Total Gate Charge (nC)
VDS=-10V ID=-3.2A
10
R
DS
(
) ON
Lim
it
10 0m
10
s
ms
1s
DC
11
0.1 0.03
VGS=-4.5V Single Pulse Tc=25 C 0.1 1 10 20 50
-VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe Operating Area
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VDD t on toff tr
90%
5
VGS RGEN
V IN D G
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
10
Normalized Transient
Thermal Resistance
1
0.5 0.2
PDM t1
on
0.1
0.1 0.05 0.02 0.01
t2
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
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A
L G F M
J
B
C
I
H
E
D (TYP .)
2.70 2.40 1.40 0.35 0
3.10 2.80 1.60 0.50 0.10 0.55
0.106 0.094 0.055 0.014 0
0.122 0.110 0.063 0.020 0.004
F
G
0.45 1.90 REF. 1.00 0.10 0.40 0.45 0°
0.022 0.018 0.075 REF. 0.039 0.004 0.016 0.033 0° 0.051 0.008 0.045 10°
I J L M
1.30 0.20 1.15 10°
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SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:㎜ PACKAGE
SOT-23
A0 3.20 ±0.10
B0 3.00 ±0.10
K0 1.33 ±0.10
D0 ∮1.00 +0.25
D1 ∮1.50 +0.10
E
8.00 +0.30 -0.10
E1 1.75 ±0.10
E2 3.50 ±0.05
P0 4.00 ±0.10
P1 4.00 ±0.10
P2 2.00 ±0.05
T 0.20 ±0.02
SOT-23 Reel
UNIT:㎜ TAPE SIZE 8㎜ REEL SIZE ∮178 M ∮178 ±1 N ∮60 ±1 W 9.00 ±0.5 W1 12.00 ±0.5 H ∮13.5 ±0.5 K 10.5 S 2.00 ±0.5 G ∮10.0 R 5.00 V 18.00
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