STS2611

S amHop Microelectronics C orp. S T S 2611 F E B 25 2005 P - C h a n n e l E n h a n c e m e n t M o d e F i e l d E f f e c t T r a n s i s to r P R O D U C T S U MMA R Y V DS S -20V F E AT U R E S ( m W ) Max ID -2.8A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 9 0 @ V G S = -4.5V 1 50 @ V G S = -2.5V R ugge d a nd re lia ble . S O T -2 6 pa c ka ge . 1 256 TS OP 6 T op V ie w D D D G 1 2 3 6 5 4 D D S G 3 4 S A B S O L U T E MA X IMU M R A T IN G S ( T A =2 5 C u n l e s s o th e r w i s e n o te d ) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit -2 0 12 -2 . 8 -1 1 -1 . 2 5 1.25 -5 5 to 1 5 0 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R thJ A 100 C /W 1 S T S 2611 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -1 6 V, V G S = 0 V V G S = 12V, V DS =0V V DS = V G S , ID =-250uA V G S = -4 . 5 V, I D = -2 . 5 A V G S = -2 . 5 V, I D = -1 . 0 A V D S = -5 V, V G S = -4 . 5 V V D S = -5 V, I D = -2 . 5 A Min Typ C Ma x U nit -2 0 1 100 -0 . 5 -0 . 8 -1 . 5 75 -7 6 380 100 60 90 125 150 V uA nA V m-ohm m-ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V D S = -2 0 V, V G S = 0 V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = -1 0 V, I D = -1 A , V G S = -4 . 5 V, R G E N = 6 o hm 7. 5 10. 9 27. 3 22. 5 3. 6 ns ns ns ns nC nC nC V D S = -1 0 V, I D = -2 . 5 A , V G S = -4 . 5 V 0. 9 0. 8 2 S T S 2611 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r 5 D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0V, Is =-1. 25A M in T y p M a x U n it -0 . 8 1 -1 . 2 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 20 15 -V G S =10V -V G S =4.5V -V G S =4V 25 C 12 -55 C T j=125 C 9 6 - I D , D ra in C urre nt( A ) -V G S =3V 12 8 -V G S =2V -I D , D ra in C urre nt ( A ) 16 4 0 3 0 0. 0 0 0. 5 1 1. 5 2 2. 5 3 0. 6 1. 2 1. 8 2. 4 3. 0 3. 6 -V D S , D ra in-to-S ourc e V olta ge ( V ) -V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 2. 2 1000 800 600 400 200 0 C rs s 0 5 10 15 20 25 30 C is s F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =-4.5V I D =-2.5A R DS (ON) , O n-R e s is ta nc e ( N orma liz e d) 1. 8 1. 4 1. 0 0. 6 0. 2 0 C , C a pa c ita nc e ( pF ) C os s -5 0 -2 5 0 25 50 75 100 125 T j( C ) -V D S , D ra in-to S ourc e V olta ge ( V ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 3 S T S 2611 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =-250uA 1.10 I D =-250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gF S , T rans conductance (S ) 8 6 4 2 0 0 3 6 9 V DS =-5V 12 15 -Is , S ource-drain current (A) 10 10 2 0 0 0.6 0.8 1.0 T J =25 C 1.2 1.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 5 -I D , Drain C urrent (A) L im 4 3 2 1 0 0 V DS =-10V I D =-2.5A 10 (O RD S it N) 10 10 0m s ms 11 DC 1s 0.1 0.03 V G S =-4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.5 1 1 .5 2 2.5 3 3.5 4 Q g, T otal G ate C harge (nC ) - V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 2611 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 2611 TSOP6 Tape and Reel Data TSOP6 Carrier Tape TSOP6 Reel 7 S T S 2611 6