STS3414

STS3414 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 50 @ VGS=10V 30V 4A 60 @ VGS=4.5V 75 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a a Limit 30 ±12 TA=25°C TA=25°C 4 15 1.25 -55 to 150 Units V V A A W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Jan,16,2009 1 www.samhop.com.tw STS3414 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c 30 1 ±100 VGS= ±12V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=4A VGS=4.5V , ID=3A VGS=2.5V , ID=1A VDS=5.0V , ID=4A 0.5 0.9 37 45 50 13 1.2 50 60 75 V m ohm m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 440 62 37 pF pF pF VDD=5V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=4A,VGS=10V VDS=15V,ID=4A,VGS=4.5V VDS=15V,ID=4A, VGS=4.5V 4 8 43 5 9.3 4.6 1 1.4 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=1.25A 0.82 1.25 1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Jan,16,2009 2 www.samhop.com.tw S TS3414 Ver 1.1 30 15 V G S =3V -55 C V G S =3.5V I D, Drain Current(A) V G S =10V 18 I D, Drain Current(A) 24 12 V G S =2.5V 9 12 V G S =2V 6 0 0 0.5 1 1.5 2 2.5 3 6 T j=125 C 3 25 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 80 60 40 V G S =10V 20 1 Figure 2. Transfer Characteristics 1.75 1.60 1.45 1.30 1.15 1.00 0.00 0 25 50 75 100 125 V G S =10V I D =4A V G S =4.5V I D =3A V G S =4.5V 1 6 12 18 24 30 R DS(on), On-Resistance Normalized R DS(on)(m Ω) ID, Drain Current(A) Tj, Junction Temperature(° C ) 150 T j ( °C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,16,2009 3 www.samhop.com.tw S TS3414 Ver 1.1 120 100 80 20 Is, Source-drain current(A) I D =4A 10 RDS(on)(m Ω) 125 C 60 40 75 C 20 0 25 C 25 C 125 C 75 C 0 2 4 6 8 10 1 0.3 0.6 0.9 1.2 1.5 1.8 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 C is s V GS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 400 V DS =15V I D =4A 300 200 100 C rs s 0 0 5 10 C os s 15 20 25 30 0 2 4 6 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 50 100 I D, Drain Current(A) 10 RD ON S( )L im it 10 1m 10 s 1 0 ms 0m s DC Switching Time(ns) TD(off ) 0u s 1 10 Tf TD(on) Tr 0.1 V DS =5V ,ID=1A V G S = 10V V G S =10V S ingle P ulse T A =25 C 1 10 30 100 1 6 10 100 0.1 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jan,16,2009 4 www.samhop.com.tw S TS3414 Ver 1.1 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Jan,16,2009 5 www.samhop.com.tw S TS3414 V er 1.1 PACKAGE OUTLINE DIMENSIONS SOT 23 A G L J F M B C I H E D (TYP .) F G I J L M Jan,16,2009 6 www.samhop.com.tw S TS3414 Ver 1.1 SOT-23 Tape and Reel Data SOT-23 Carrier Tape TR FEED DIRECTION UNIT: PACKAGE SOT-23 A0 3.20 0.10 B0 3.00 0.10 K0 1.33 0.10 D0 1.00 +0.25 D1 1.50 +0.10 E 8.00 +0.30 -0.10 E1 1.75 0.10 E2 3.50 0.05 P0 4.00 0.10 P1 4.00 0.10 P2 2.00 0.05 T 0.20 0.02 SOT-23 Reel W1 S G N M K H W K 10.5 S 2.00 0.5 G 10.0 R 5.00 V 18.00 R UNIT: TAPE SIZE 8 REEL SIZE 178 M 178 1 N 60 1 W 9.00 0.5 W1 12.00 0.5 H 13.5 0.5 V Jan,16,2009 7 www.samhop.com.tw