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STS3622

STS3622

  • 厂商:

    SAMHOP

  • 封装:

  • 描述:

    STS3622 - Dual N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics Corp.

  • 数据手册
  • 价格&库存
STS3622 数据手册
S amHop Microelectronics C orp. S T S 3622 J a n, 0 3 2 0 0 6 Dual N-C hannel E nhanc ement Mode F ield E ffec t T rans is tor P R O D U C T S U MMA R Y V DS S 30V F E AT U R E S ( m W ) Max ID 3A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 65 @ V G S = 1 0V 9 0 @ V G S =4.5V R ugge d a nd re lia ble . S O T -2 6 pa c ka ge . D1 D2 S O T 26 T op V ie w G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 S1 G2 S2 A B S O L U T E MA X IMU M R A T IN G S ( T A =2 5 C u n l e s s o th e r w i s e n o te d ) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T J =2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 30 20 3 12 1. 25 1.25 -5 5 to 1 5 0 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R thJ A 100 C /W 1 S T S 3622 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 1 0 V, I D = 3 A V G S = 4 . 5 V, I D = 2 A V D S = 5 V, V G S = 4 . 5 V V D S = 5 V, I D = 3 A Min Typ C Ma x U nit 30 1 100 1 1. 5 45 70 10 6 310 73 38 3 65 90 V uA nA V m-ohm m-ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = 1 5 V, ID = 1A , V G S = 1 0 V, R L = 1 5 o hm R G E N = 6 o hm V DS =15V, ID = 3A , V G S =10V 7. 2 4. 5 12 2. 5 6. 2 0. 9 1. 8 ns ns ns ns nC nC nC 2 S T S 3622 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r 5 D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 . 2 5 A M in T y p M a x U n it 0. 82 1. 2 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 10 V G S =10V 10 V G S =4V 8 ID , D ra in C urre nt( A ) 8 I D , D ra in C urre nt ( A ) V G S =4.5V 6 4 2 0 6 T j=125 C 4 25 C 2 -55 C 0 0. 0 0. 8 1. 6 2. 4 3. 2 4. 0 4. 8 V G S =3V 0 0. 5 1 1. 5 2 2. 5 3 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 120 100 1. 5 F igure 2 . T ra ns fe r C ha ra c te ris tic s R DS (ON) , O n-R e s is ta nc e N ormalized 1. 4 1. 3 1. 2 1. 1 1. 0 0 R D S ( o n ) ( m W) V G S =10V I D =3A 80 60 V G S =4.5V V G S =10V 40 20 0 V G S =4.5V I D =2A 0 2 4 6 8 10 0 25 50 75 100 I D , D ra in C urre nt ( A ) 150 125 T j( C ) F igure 3 . O n-R e s is ta nc e vs . D ra in C urre nt a nd G a te V olta ge F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 3 S T S 3622 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 F igure 5. G ate T hres hold V ariation with T emperature 120 T j, J unction T emperature ( C ) F igure 6. B reakdown V oltage V ariation with T emperature 20 1 25 C I D =3A 100 80 1 25 C 60 40 20 0 75 C 25 C Is , S ource-drain current (A) 10 R D S ( o n ) ( m W) 75 C 25 C 0 2 4 6 8 10 1 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G a te -S ourc e V olta ge ( V ) F igure 7 . O n-R e s is ta nc e vs . G a te -S ourc e V olta ge V S D , B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 3622 500 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Q g, T otal G ate C harge (nC ) C , C a pa c ita nc e ( pF ) 400 300 200 100 C rs s 0 0 5 10 15 20 25 30 C os s C is s V DS =15V I D =3A V D S , D ra in-to S ourc e V olta ge ( V ) F igure 9 . C a pa c ita nc e F igure 10. G ate C harge 100 S witching T ime (ns ) 50 10 RD S Tr T D (o ff) I D , Drain C urrent (A) ( ) ON L im it 10 10 0m ms T D (o n) 10 Tf 11 DC 1s s 1 1 6 10 V D S = 15V ,I D= 1A V G S = 10V 0.1 0.03 V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 50 6 0 1 00 30 0 60 0 R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T S 3622 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 S T S 3622 P AC K AG E OUT LINE DIME NS IONS S OT 26 7 S T S 3622 SOT26 Tape and Reel Data SOT26 Carrier Tape SOT26 Reel 8
STS3622 价格&库存

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