STS3623

S amHop Microelectronics C orp. S T S 3623 J un, 09 2006 Dual N-Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ) Max ID 4A R DS (ON) ( m S uper high dense cell design for low R DS (ON ). 50 @ V G S = 10V 65 @ V G S = 4.5V R ugged and reliable. S OT-26 package. D1 D2 S OT26 Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 4 16 1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 3623 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 3A V GS = 4.5V, ID = 2A V DS = 5V, V GS = 4.5V V DS = 5V, ID =3A Min Typ C Max Unit 30 1 100 1 1.6 40 50 10 7 280 70 38 3 50 65 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 ohm 6 5 18 6 5.9 ns ns ns ns nC nC nC V DS =15V, ID = 3A, V GS =10V 0.7 1.4 2 S T S 3623 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =1.25A Min Typ Max Unit 0.81 1.15 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 V G S =10V V G S =4.5V V G S =4V 12 ID , D rain C urrent(A) 16 I D , Drain C urrent (A) 12 9 T j=125 C 6 8 V G S =3V 4 0 0 0.5 1 1.5 3 0 0.0 25 C -55 C 2.4 3.2 4.0 4.8 2 2.5 3 0.8 1.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 80 70 1.5 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance Normalized 1.4 1.3 1.2 1.1 1.0 0 0 25 50 75 100 150 125 T j( C ) V G S =4.5V I D =2A V G S =10V I D =3A ) 60 R DS (on) ( m V G S =4.5V 50 40 30 0 V G S =10V 0 3 6 9 12 15 I D , Drain C urrent (A) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Temperature 3 S T S 3623 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 F igure 5. G ate T hres hold V ariation with T emperature 90 T j, J unction T emperature ( C ) F igure 6. B reakdown V oltage V ariation with T emperature 20 I D =3A 80 70 Is , S ource-drain current (A) 10 5 R DS (on) ( m ) 125 C 60 75 C 50 25 C 40 0 125 C 75 C 25 C 0 2 4 6 8 10 1 0 0.4 0.8 1.2 1.6 2.0 V G S , G ate-S ource Voltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage V S D , B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 3623 500 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Qg, T otal G ate C harge (nC ) C , C apacitance (pF ) 400 300 200 100 0 0 5 C os s C rs s 10 15 20 25 30 C is s V DS =15V I D =3A V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance F igure 10. G ate C harge 100 S witching T ime (ns ) 50 10 RD S Tr I D , Drain C urrent (A) ( ) ON L im it 10 10 0m ms 10 Tf 11 DC s 1s 1 1 6 10 V DS =15V ,I D=1A V G S =10V 0.1 0.03 V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 50 60 100 300 600 R g, G ate R es is tance ( ) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T S 3623 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 P DM t1 t2 1. 2. 3. 4. 0.01 0.1 1 10 0.05 0.02 0.01 0.01 0.00001 0.0001 Single Pulse R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 0.001 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 S T S 3623 P AC K AG E OUT LINE DIME NS IONS S OT 26 7 S T S 3623 SOT 26 Tape and Reel Data SOT 26 Carrier Tape 3.50 + 0.05 1.75 + 0.10 +0.10 1.50 0.00 4.00 + 0.10 2.00 + 0.05 A 8.0 + 0.30 B B A 0.25 + 0.05 4.00 + 0.10 3.3 + 0.1 5 R0 .3 +0.10 1.00 0.00 5M ax R0 .3 M ax R0 . Bo 3.2 + 0.1 3 R0 .3 1.50 178.0 + 0.5 9.0 SOT 26 Ko 1.5 + 0.1 SECTION B-B SECTION A-A SOT 26 Reel 2.2 + 0.5 10.6 13.5 + 0.5 SCALE 2:1 8 60 + 0.5 +1.5 -0