STS6601

S TS6601 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -3.2A R DS(ON) (m Ω) Max 110 @ VGS=-10V 160 @ VGS=-4.5V S OT26 Top View D D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12 a Units V V A A A W W °C Maximum Power Dissipation 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Sep,30,2008 1 www.samhop.com.tw STS6601 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V -1 ±100 uA nA VDS=VGS , ID=-250uA VGS=-10V , ID=-3.2A VGS=-4.5V , ID=-2.6A VDS=-10V , ID=-3.2A -1.0 -2.0 88 120 6.3 745 69 42 12 12 65.8 22 13.5 6.5 1.5 3.2 -3 110 160 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-30V,VGS=0V f=1.0MHz VDD=-30V ID=-1A VGS=-10V RGEN=6 ohm VDS=-30V,ID=-3.2A,VGS=-10V VDS=-30V,ID=-3.2A,VGS=-4.5V VDS=-30V,ID=-3.2A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b -2.0 -0.8 -1.2 A V VGS=0V,IS=-2A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Sep,30,2008 2 www.samhop.com.tw S TS6601 Ver 1.0 10 V G S = -10V V G S = -4.5V 15 -ID, Drain Current(A) V G S = -3.5V -I D, Drain Current(A) 8 12 6 V G S = -4V 9 4 2 V G S = -3V 6 25 C 3 125 C -55 C 2.7 3.6 4.5 5.2 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.9 1.8 -V DS, Drain-to-Source Voltage(V) -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 240 200 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 V G S =-4.5V I D = -2.6A V G S =-10V I D =-3.2A R DS(on)(m Ω) 160 VG S =-4.5V 120 80 40 1 VG S =-10V 1 2 4 6 8 10 R DS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 V DS =V G S I D =-250uA 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,30,2008 3 www.samhop.com.tw S TS6601 Ver 1.0 300 250 20 -Is, Source-drain current(A) I D =-3.2A 10 125 C 25 C R DS(on)(m Ω) 200 125 C 150 100 50 0 75 C 25 C 75 C 0 2 4 6 8 10 1 0 0.3 0.6 0.9 1.2 1.5 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) 8 6 4 2 0 0 800 600 400 200 0 0 Cos s C rs s 5 C is s V DS = -30V I D =-3.2A 10 15 20 25 30 2 4 6 8 10 12 14 16 -V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 50 10 L im it 10 10 DC 600 Switching Time(ns) 100 60 10 -ID, Drain Current(A) TD(off) Tr TD(on) Tf RD S ( ) ON 0u 1m s 1 ms s 0.1 V G S =-10V S ingle P ulse T c=25 C 1 1 V DS =-30V,ID=-1A V G S =-10V 6 10 60 100 300 600 0.01 0.1 1 10 100 300 Rg, Gate Resistance(Ω) -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,30,2008 4 www.samhop.com.tw S TS6601 Ver 1.0 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Sep,30,2008 5 www.samhop.com.tw S TS6601 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT26 Sep,30,2008 6 www.samhop.com.tw S TS6601 Ver 1.0 SOT 26 Tape and Reel Data SOT 26 Carrier Tape 3.50 + 0.05 1.75 + 0.10 +0.10 1.50 0.00 4.00 + 0.10 2.00 + 0.05 A 8.0 + 0.30 B B A 0.25 + 0.05 5M ax 4.00 + 0.10 3.3 + 0.1 5 R0 .3 +0.10 1.00 0.00 .3 R0 M ax Bo 3.2 + 0.1 R0 . 3 R0 . 1.50 178.0 + 0.5 9.0 -0 SOT 26 60 + 0.5 +1.5 Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel 2.2 + 0.5 10.6 13.5 + 0.5 SCALE 2:1 3 SECTION B-B Sep,30,2008 7 www.samhop.com.tw