STS8205

S T S 8205 S amHop Microelectronics C orp. J u n, 0 8 2 0 0 5 v e r 1 . 4 D ua l N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor P R O D U C T S U MMA R Y V DS S 20V F E AT U R E S ( mW ) Max ID 4A R DS (ON) S upe r high de ns e c e ll de s ign for low R D S (O N ) . 30 @ V G S = 4 .0V 46 @ V G S = 2 .5V R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge . D1 D2 TS OP 6 T op V ie w S1 D 1 /D 2 S2 1 2 3 6 5 4 G1 D 1 /D 2 G2 G1 S1 G2 S2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous @ T J =2 5 C -P uls e d b S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 20 10 4 25 2 1. 25 -5 5 to 1 5 0 U nit V V A A A W C D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 100 C /W 1 S T S 8205 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A = 2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 1 6 V, V G S = 0 V V G S = 1 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 4 . 0 V, I D = 4 A V G S =2. 5V, ID = 3A V DS = 5V, ID =4A Min Typ C Ma x U nit 20 1 V uA 1 0 0 nA 0. 5 0. 8 27 35 13 800 155 125 1. 5 30 46 V m ohm m ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e F orwa rd T ra ns c onduc ta nc e S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =8V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = 1 0 V, ID = 1A , V G E N = 4 . 0 V, R L = 1 0 o hm R G E N = 1 0 o hm V DS =10V, ID = 4A , V G S =4. 0V 18. 3 4. 8 43. 5 20 11 2. 2 2. 5 ns ns ns ns nC nC nC 2 S T S 8205 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r 5 D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =2 A M in T y p M a x U n it 0. 8 1. 2 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 20 V G S =10,9,8,7,6,5,4,3V 25 25 C V G S =2V 20 16 ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) -55 C 15 T j=125 C 10 12 8 4 0 5 0 0. 0 0 2 4 6 8 10 12 0. 3 0. 6 0. 9 1. 2 1. 5 1. 8 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 2. 2 1500 1. 8 F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =4V I D =4A C , C a pa c ita nc e ( pF ) R DS (ON) , O n-R e s is ta nc e ( N orma liz e d ) 12 1200 900 600 300 C rs s 0 0 2 4 6 8 C os s 10 1. 4 1. 0 0. 6 0. 2 0 C is s -5 0 -2 5 0 25 50 75 100 125 T j( C ) V D S , D ra in-to S ourc e V olta ge ( V ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 3 S T S 8205 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gF S , T rans conductance (S ) 20 15 10 5 0 0 5 10 15 V DS =5V 20 25 Is , S ource-drain current (A) 25 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 V DS =10V I D =4A 10 RD ON S( )L im it 10 10 0m s ms 11 1s DC 0.1 0.03 V G S =4V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 8205 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.05 0.1 t2 0.01 0.00001 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 1. 2. 3. 4. R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 8205 6 S T S 8205 TSOP6 Tape and Reel Data TSOP6 Carrier Tape TSOP6 Reel 7