STU3055L2

STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES (mW) ID 18A RDS(ON) Max Super high dense cell design for low RDS(ON). 40 @ VGS = 10V 45 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed @TC=25 C Symbol VDS VGS ID ID M IS PD TJ, TSTG Limit 20 12 18 30 15 50 -55 to 175 Unit V V A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D3055L2 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A =2 5 C unle s s othe rwis e note d) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 1 6 V, V G S = 0 V V G S = 1 2 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S = 1 0 V , I D =6 . 0 A V G S =4 . 5 V , I D = 5 . 2 A V D S = 5 V, V G S = 4 . 5 V V D S = 1 0 V, I D = 6 . 0 A Min Typ C Ma x U nit 20 1 100 0. 7 1. 2 25 30 15 7 614 151 116 1. 8 40 45 V uA nA V m-ohm m-ohm O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =8V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D D = 1 0 V, ID = 1A , V G E N = 4 . 5 V, R L = 1 0 o hm R G E N = 6 ohm V DS =10V, ID =6A , V G S =10V V DS =10V, ID =6A , V G S =4. 5V V DS =10V, ID = 6A , V G S =10V 2 14. 3 11. 9 22. 1 16. 7 18. 9 8. 9 2. 1 2. 4 ns ns ns ns nC nC nC nC S T U/D3055L2 E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r 5 D iode F orwa rd V olta ge S y m bo l VSD C ondition V G S = 0 V , I s =1 0 A M in T y p M a x U n it 1 1. 3 V C D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t 10s e c . b. P uls e Te s t: P uls e W idth 300us , D uty C yc le 2% . c . G ua ra nte e d by de s ign, not s ubje c t to produc tion te s ting. 10 V G S =10,9,8,7,6,5,4,3V 25 -55 C 20 ID , D ra in C urre nt( A ) I D , D ra in C urre nt ( A ) 8 6 V G S =2V 4 2 0 15 10 25 C 5 0 0. 0 T j=125 C 0 2 4 6 8 10 12 0. 6 1. 2 1. 8 2. 4 3. 0 3. 6 V D S , D ra in-to-S ourc e V olta ge ( V ) V G S , G a te -to-S ourc e V olta ge ( V ) F igure 1 . O utput C ha ra c te ris tic s 1250 2. 2 F igure 2 . T ra ns fe r C ha ra c te ris tic s V G S =10V I D =6A C , C a pa c ita nc e ( pF ) RDS(ON), On-Resistance ( N orma liz e d) 1000 750 C is s 500 250 0 C rs s 0 4 8 12 16 20 24 1. 8 1. 4 1. 0 0. 6 0. 2 0 C os s V D S , D ra in-to S ourc e V olta ge ( V ) -5 0 -2 5 0 25 50 75 100 125 T j( C ) F igure 3 . C a pa c ita nc e F igure 4 . O n-R e s is ta nc e Va ria tion with Te mpe ra ture 3 S T U/D3055L2 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 I D =250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 24 F igure 6. B reakdown V oltage V ariation with T emperature 20 gF S , T rans conductance (S ) 16 12 8 4 0 V DS =10V 0 5 10 15 20 25 Is , S ource-drain current (A) 20 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 m it 10 10 0m s V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS =10V I D =6A 10 R DS (O N ) Li ms 11 DC 1s 0.1 0.03 V G S =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T U/D3055L2 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R θJ A ( t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A ( t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D3055L2 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 6 S T U/D3055L2 TO-252 Tape and Reel Data TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 10.3 ±0.1 K0 2.50 ±0.1 D0 ψ2 D1 ψ1.5 + 0.1 -0 E 16.0 0.3± E1 1.75 0.1± E2 7.5 ±0.15 P0 8.0 ±0.1 P1 4.0 ±0.1 P2 2.0 ±0.15 T 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N ψ97 ± 1.0 W 17.0 + 1.5 -0 T 2.2 H ψ13.0 + 0.5 - 0.2 K 10.6 S 2.0 ±0.5 G R V 7